Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell
A photovoltaic cell, based on copper and indium selenide (CuInSe₂) thin
 layers, with a good efficiency can be achieved by simple, easy to implement and low cost
 techniques. The high refractive index materials used as absorbers in photovoltaic cells
 cause high reflection lo...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2013 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117813 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell / Abdelhakim Mahdjoub, Lazhar Hadjeris // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 379-381. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | A photovoltaic cell, based on copper and indium selenide (CuInSe₂) thin
layers, with a good efficiency can be achieved by simple, easy to implement and low cost
techniques. The high refractive index materials used as absorbers in photovoltaic cells
cause high reflection losses (about 30%). Thin CdS and ZnO films that are, respectively,
the buffer layer and the window of the cell have lower indices and are naturally suited to
antireflective applications. Also, a suitable choice of the film thickness leads to
minimization of reflection losses, resulting in a significant improvement of the
photovoltaic efficiency. The aim of this work is to provide easy solutions that reduce
reflection losses to less than 4% while respecting technological constraints.
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| ISSN: | 1560-8034 |