Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2013
• ISSN: 1560-8034
• Hauptverfasser: Abdelhakim Mahdjoub, Lazhar Hadjeris
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117813
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell / Abdelhakim Mahdjoub, Lazhar Hadjeris // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 379-381. — Бібліогр.: 8 назв. — англ.

A photovoltaic cell, based on copper and indium selenide (CuInSe₂) thin
 layers, with a good efficiency can be achieved by simple, easy to implement and low cost
 techniques. The high refractive index materials used as absorbers in photovoltaic cells
 cause high reflection losses (about 30%). Thin CdS and ZnO films that are, respectively,
 the buffer layer and the window of the cell have lower indices and are naturally suited to
 antireflective applications. Also, a suitable choice of the film thickness leads to
 minimization of reflection losses, resulting in a significant improvement of the
 photovoltaic efficiency. The aim of this work is to provide easy solutions that reduce
 reflection losses to less than 4% while respecting technological constraints.