Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films
The optical transmissions spectra of amorphous Ge-S-Se films of chemical
 compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation,
 have been measured over the whole 400 to 800 nm spectral range. It has been ascertained
 that annealing of the fil...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2013 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117814 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photo- and thermally-induced changes in the optical properties
 of Ge-S-Se amorphous films / V.M. Rubish, E.V. Gera, M.O. Durcot, M.M. Pop, S.O. Kostyukevich, A.A. Kudryavtsev, O.S. Mykulanynets-Meshko, M.Yu. Rigan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 349-353. — Бібліогр.: 30 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The optical transmissions spectra of amorphous Ge-S-Se films of chemical
compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation,
have been measured over the whole 400 to 800 nm spectral range. It has been ascertained
that annealing of the films leads to the absorption edge shift into the short-wave spectral
region. The values of pseudo-gap width Eg and film refraction index n have been
determined. Changes in optical properties of films are caused by structural
transformations taking place in them under laser illumination and annealing.
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| ISSN: | 1560-8034 |