Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films

The optical transmissions spectra of amorphous Ge-S-Se films of chemical
 compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation,
 have been measured over the whole 400 to 800 nm spectral range. It has been ascertained
 that annealing of the fil...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2013
Hauptverfasser: Rubish, V.M., Gera, E.V., Durcot, M.O., Pop, M.M., Kostyukevich, S.O., Kudryavtsev, A.A., Mykulanynets-Meshko, O.S., Rigan, M.Yu.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117814
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Photo- and thermally-induced changes in the optical properties
 of Ge-S-Se amorphous films / V.M. Rubish, E.V. Gera, M.O. Durcot, M.M. Pop, S.O. Kostyukevich, A.A. Kudryavtsev, O.S. Mykulanynets-Meshko, M.Yu. Rigan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 349-353. — Бібліогр.: 30 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Beschreibung
Zusammenfassung:The optical transmissions spectra of amorphous Ge-S-Se films of chemical
 compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation,
 have been measured over the whole 400 to 800 nm spectral range. It has been ascertained
 that annealing of the films leads to the absorption edge shift into the short-wave spectral
 region. The values of pseudo-gap width Eg and film refraction index n have been
 determined. Changes in optical properties of films are caused by structural
 transformations taking place in them under laser illumination and annealing.
ISSN:1560-8034