Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films
The optical transmissions spectra of amorphous Ge-S-Se films of chemical compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation, have been measured over the whole 400 to 800 nm spectral range. It has been ascertained that annealing of the films leads to the absorpti...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2013 |
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117814 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films / V.M. Rubish, E.V. Gera, M.O. Durcot, M.M. Pop, S.O. Kostyukevich, A.A. Kudryavtsev, O.S. Mykulanynets-Meshko, M.Yu. Rigan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 349-353. — Бібліогр.: 30 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Rubish, V.M. Gera, E.V. Durcot, M.O. Pop, M.M. Kostyukevich, S.O. Kudryavtsev, A.A. Mykulanynets-Meshko, O.S. Rigan, M.Yu. 2017-05-26T18:53:13Z 2017-05-26T18:53:13Z 2013 Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films / V.M. Rubish, E.V. Gera, M.O. Durcot, M.M. Pop, S.O. Kostyukevich, A.A. Kudryavtsev, O.S. Mykulanynets-Meshko, M.Yu. Rigan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 349-353. — Бібліогр.: 30 назв. — англ. 1560-8034 PACS 78.66.Jg https://nasplib.isofts.kiev.ua/handle/123456789/117814 The optical transmissions spectra of amorphous Ge-S-Se films of chemical compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation, have been measured over the whole 400 to 800 nm spectral range. It has been ascertained that annealing of the films leads to the absorption edge shift into the short-wave spectral region. The values of pseudo-gap width Eg and film refraction index n have been determined. Changes in optical properties of films are caused by structural transformations taking place in them under laser illumination and annealing. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films |
| spellingShingle |
Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films Rubish, V.M. Gera, E.V. Durcot, M.O. Pop, M.M. Kostyukevich, S.O. Kudryavtsev, A.A. Mykulanynets-Meshko, O.S. Rigan, M.Yu. |
| title_short |
Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films |
| title_full |
Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films |
| title_fullStr |
Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films |
| title_full_unstemmed |
Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films |
| title_sort |
photo- and thermally-induced changes in the optical properties of ge-s-se amorphous films |
| author |
Rubish, V.M. Gera, E.V. Durcot, M.O. Pop, M.M. Kostyukevich, S.O. Kudryavtsev, A.A. Mykulanynets-Meshko, O.S. Rigan, M.Yu. |
| author_facet |
Rubish, V.M. Gera, E.V. Durcot, M.O. Pop, M.M. Kostyukevich, S.O. Kudryavtsev, A.A. Mykulanynets-Meshko, O.S. Rigan, M.Yu. |
| publishDate |
2013 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The optical transmissions spectra of amorphous Ge-S-Se films of chemical
compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation,
have been measured over the whole 400 to 800 nm spectral range. It has been ascertained
that annealing of the films leads to the absorption edge shift into the short-wave spectral
region. The values of pseudo-gap width Eg and film refraction index n have been
determined. Changes in optical properties of films are caused by structural
transformations taking place in them under laser illumination and annealing.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117814 |
| citation_txt |
Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films / V.M. Rubish, E.V. Gera, M.O. Durcot, M.M. Pop, S.O. Kostyukevich, A.A. Kudryavtsev, O.S. Mykulanynets-Meshko, M.Yu. Rigan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 349-353. — Бібліогр.: 30 назв. — англ. |
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| first_indexed |
2025-11-30T09:29:48Z |
| last_indexed |
2025-11-30T09:29:48Z |
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