Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films
The optical transmissions spectra of amorphous Ge-S-Se films of chemical compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation, have been measured over the whole 400 to 800 nm spectral range. It has been ascertained that annealing of the films leads to the absorpti...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2013 |
| Hauptverfasser: | Rubish, V.M., Gera, E.V., Durcot, M.O., Pop, M.M., Kostyukevich, S.O., Kudryavtsev, A.A., Mykulanynets-Meshko, O.S., Rigan, M.Yu. |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117814 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films / V.M. Rubish, E.V. Gera, M.O. Durcot, M.M. Pop, S.O. Kostyukevich, A.A. Kudryavtsev, O.S. Mykulanynets-Meshko, M.Yu. Rigan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 349-353. — Бібліогр.: 30 назв. — англ. |
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