Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2013
• Hauptverfasser: Rubish, V.M., Gera, E.V., Durcot, M.O., Pop, M.M., Kostyukevich, S.O., Kudryavtsev, A.A., Mykulanynets-Meshko, O.S., Rigan, M.Yu.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117814
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films / V.M. Rubish, E.V. Gera, M.O. Durcot, M.M. Pop, S.O. Kostyukevich, A.A. Kudryavtsev, O.S. Mykulanynets-Meshko, M.Yu. Rigan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 349-353. — Бібліогр.: 30 назв. — англ.

The optical transmissions spectra of amorphous Ge-S-Se films of chemical compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation, have been measured over the whole 400 to 800 nm spectral range. It has been ascertained that annealing of the films leads to the absorpti...