Graphene layers fabricated from the Ni/a-SiC bilayer precursor

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2013
• Main Authors: Nazarov, A.N., Vasin, A.V., Gordienko, S.O., Lytvyn, P.M., Strelchuk, V.V., Nikolenko, A.S., Stubrov, Yu.Yu., Hirov, A.S., Rusavsky, A.V., Popov, V.P., Lysenko, V.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117818
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Graphene layers fabricated from the Ni/a-SiC bilayer precursor / A.N. Nazarov, A.V. Vasin, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, Yu.Yu. Stubrov, A.S. Hirov, A.V. Rusavsky, V.P. Popov, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 322-330. — Бібліогр.: 14 назв. — англ.

This paper considers a synthesis of graphene flakes on the Ni surface by
 vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a)
 SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering technique. The
 lateral size of graphene flakes was estimated to be about hundreds of micrometers while
 the thickness estimated using Raman scattering varied from one to few layers in case of
 vacuum annealing. Rapid thermal annealing (RTA) in nitrogen ambient results in
 formation of multilayer graphene with surface covering up to 80%. The graphene layers
 synthesized on Ni during CVD process was used as reference samples. Atomic force
 microscopy (AFM) is not able to detect graphene flakes in regime of surface topology
 examination because of large roughness of Ni surface. Employment of scanning Kelvin
 probe force microscopy (SKPFM) demonstrates correlation of the surface potential and
 graphene flakes visible in optical microscopy. Using the KPFM method, potential
 differences between Ni and graphene were determined.