Graphene layers fabricated from the Ni/a-SiC bilayer precursor
This paper considers a synthesis of graphene flakes on the Ni surface by
 vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a)
 SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering technique. The
 lateral size of graphene flakes was...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2013 |
| Main Authors: | , , , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117818 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Graphene layers fabricated from the Ni/a-SiC bilayer precursor / A.N. Nazarov, A.V. Vasin, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, Yu.Yu. Stubrov, A.S. Hirov, A.V. Rusavsky, V.P. Popov, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 322-330. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862714480900702208 |
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| author | Nazarov, A.N. Vasin, A.V. Gordienko, S.O. Lytvyn, P.M. Strelchuk, V.V. Nikolenko, A.S. Stubrov, Yu.Yu. Hirov, A.S. Rusavsky, A.V. Popov, V.P. Lysenko, V.S. |
| author_facet | Nazarov, A.N. Vasin, A.V. Gordienko, S.O. Lytvyn, P.M. Strelchuk, V.V. Nikolenko, A.S. Stubrov, Yu.Yu. Hirov, A.S. Rusavsky, A.V. Popov, V.P. Lysenko, V.S. |
| citation_txt | Graphene layers fabricated from the Ni/a-SiC bilayer precursor / A.N. Nazarov, A.V. Vasin, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, Yu.Yu. Stubrov, A.S. Hirov, A.V. Rusavsky, V.P. Popov, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 322-330. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | This paper considers a synthesis of graphene flakes on the Ni surface by
vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a)
SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering technique. The
lateral size of graphene flakes was estimated to be about hundreds of micrometers while
the thickness estimated using Raman scattering varied from one to few layers in case of
vacuum annealing. Rapid thermal annealing (RTA) in nitrogen ambient results in
formation of multilayer graphene with surface covering up to 80%. The graphene layers
synthesized on Ni during CVD process was used as reference samples. Atomic force
microscopy (AFM) is not able to detect graphene flakes in regime of surface topology
examination because of large roughness of Ni surface. Employment of scanning Kelvin
probe force microscopy (SKPFM) demonstrates correlation of the surface potential and
graphene flakes visible in optical microscopy. Using the KPFM method, potential
differences between Ni and graphene were determined.
|
| first_indexed | 2025-12-07T17:51:49Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117818 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:51:49Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Nazarov, A.N. Vasin, A.V. Gordienko, S.O. Lytvyn, P.M. Strelchuk, V.V. Nikolenko, A.S. Stubrov, Yu.Yu. Hirov, A.S. Rusavsky, A.V. Popov, V.P. Lysenko, V.S. 2017-05-26T18:59:41Z 2017-05-26T18:59:41Z 2013 Graphene layers fabricated from the Ni/a-SiC bilayer precursor / A.N. Nazarov, A.V. Vasin, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, Yu.Yu. Stubrov, A.S. Hirov, A.V. Rusavsky, V.P. Popov, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 322-330. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 68.37.Ps, 78.67.Wj https://nasplib.isofts.kiev.ua/handle/123456789/117818 This paper considers a synthesis of graphene flakes on the Ni surface by
 vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a)
 SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering technique. The
 lateral size of graphene flakes was estimated to be about hundreds of micrometers while
 the thickness estimated using Raman scattering varied from one to few layers in case of
 vacuum annealing. Rapid thermal annealing (RTA) in nitrogen ambient results in
 formation of multilayer graphene with surface covering up to 80%. The graphene layers
 synthesized on Ni during CVD process was used as reference samples. Atomic force
 microscopy (AFM) is not able to detect graphene flakes in regime of surface topology
 examination because of large roughness of Ni surface. Employment of scanning Kelvin
 probe force microscopy (SKPFM) demonstrates correlation of the surface potential and
 graphene flakes visible in optical microscopy. Using the KPFM method, potential
 differences between Ni and graphene were determined. This work was supported by the National Academy of
 Sciences of Ukraine in the framework of the Ukrainian-Russia project No. 39-02-13, the State Program of
 Ukraine “Nanotechnologies and Nanomaterials” through
 the Project #3.5.2.6/48 and SFFR Project F53/161-2013. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Graphene layers fabricated from the Ni/a-SiC bilayer precursor Article published earlier |
| spellingShingle | Graphene layers fabricated from the Ni/a-SiC bilayer precursor Nazarov, A.N. Vasin, A.V. Gordienko, S.O. Lytvyn, P.M. Strelchuk, V.V. Nikolenko, A.S. Stubrov, Yu.Yu. Hirov, A.S. Rusavsky, A.V. Popov, V.P. Lysenko, V.S. |
| title | Graphene layers fabricated from the Ni/a-SiC bilayer precursor |
| title_full | Graphene layers fabricated from the Ni/a-SiC bilayer precursor |
| title_fullStr | Graphene layers fabricated from the Ni/a-SiC bilayer precursor |
| title_full_unstemmed | Graphene layers fabricated from the Ni/a-SiC bilayer precursor |
| title_short | Graphene layers fabricated from the Ni/a-SiC bilayer precursor |
| title_sort | graphene layers fabricated from the ni/a-sic bilayer precursor |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117818 |
| work_keys_str_mv | AT nazarovan graphenelayersfabricatedfromtheniasicbilayerprecursor AT vasinav graphenelayersfabricatedfromtheniasicbilayerprecursor AT gordienkoso graphenelayersfabricatedfromtheniasicbilayerprecursor AT lytvynpm graphenelayersfabricatedfromtheniasicbilayerprecursor AT strelchukvv graphenelayersfabricatedfromtheniasicbilayerprecursor AT nikolenkoas graphenelayersfabricatedfromtheniasicbilayerprecursor AT stubrovyuyu graphenelayersfabricatedfromtheniasicbilayerprecursor AT hirovas graphenelayersfabricatedfromtheniasicbilayerprecursor AT rusavskyav graphenelayersfabricatedfromtheniasicbilayerprecursor AT popovvp graphenelayersfabricatedfromtheniasicbilayerprecursor AT lysenkovs graphenelayersfabricatedfromtheniasicbilayerprecursor |