Graphene layers fabricated from the Ni/a-SiC bilayer precursor

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2013
• Main Authors: Nazarov, A.N., Vasin, A.V., Gordienko, S.O., Lytvyn, P.M., Strelchuk, V.V., Nikolenko, A.S., Stubrov, Yu.Yu., Hirov, A.S., Rusavsky, A.V., Popov, V.P., Lysenko, V.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117818
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Graphene layers fabricated from the Ni/a-SiC bilayer precursor / A.N. Nazarov, A.V. Vasin, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, Yu.Yu. Stubrov, A.S. Hirov, A.V. Rusavsky, V.P. Popov, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 322-330. — Бібліогр.: 14 назв. — англ.

This paper considers a synthesis of graphene flakes on the Ni surface by
 vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a)
 SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering technique. The
 lateral size of graphene flakes was...