Amplification of localized acoustic waves by the electron drift in a quantum well

We have investigated acoustic waves in a heterostructure with a layer embedded into a semiconductor providing acoustic waves localization near the layer and electron confinement inside the layer. For layer thicknesses smaller than wavelengths we have obtained and analyzed the dispersion relation for...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:1999
Автори: Demidenko, A. A., Kochelap, V. A.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117857
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Amplification of localized acoustic waves by the electron drift in a quantum well / A. A. Demidenko, V. A. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 11-24. — Бібліогр.: 32 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Demidenko, A. A.
Kochelap, V. A.
author_facet Demidenko, A. A.
Kochelap, V. A.
citation_txt Amplification of localized acoustic waves by the electron drift in a quantum well / A. A. Demidenko, V. A. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 11-24. — Бібліогр.: 32 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description We have investigated acoustic waves in a heterostructure with a layer embedded into a semiconductor providing acoustic waves localization near the layer and electron confinement inside the layer. For layer thicknesses smaller than wavelengths we have obtained and analyzed the dispersion relation for the localized waves. For electrons into the layer we have supposed that parallel transport is semiclassical, while perpendicular electron motion is quantized. For two-dimensional confined electrons interacting with the acoustic waves we have solved the Boltzmann equation in a parallel electric field. The solutions have been found for electron-phonon interaction via deformation potential. The dispersion relation for coupled charge density and acoustic waves has been analyzed. We have established conditions of amplification of localized acoustic waves under the electron drift for two extreme cases: i) the only lowest two-dimensional subband is populated, ii) a large number of the subbands are populated. We have found that the amplification coefficient of the acoustic waves in THz-rigion is of the order of 100 cm⁻¹. We have discussed the results and compared them with acoustic waves amplification in bulk like semiconductors.
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language English
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publishDate 1999
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Demidenko, A. A.
Kochelap, V. A.
2017-05-27T09:29:28Z
2017-05-27T09:29:28Z
1999
Amplification of localized acoustic waves by the electron drift in a quantum well / A. A. Demidenko, V. A. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 11-24. — Бібліогр.: 32 назв. — англ.
1560-8034
PACS 63.22, 72.20, 73.20.D
https://nasplib.isofts.kiev.ua/handle/123456789/117857
We have investigated acoustic waves in a heterostructure with a layer embedded into a semiconductor providing acoustic waves localization near the layer and electron confinement inside the layer. For layer thicknesses smaller than wavelengths we have obtained and analyzed the dispersion relation for the localized waves. For electrons into the layer we have supposed that parallel transport is semiclassical, while perpendicular electron motion is quantized. For two-dimensional confined electrons interacting with the acoustic waves we have solved the Boltzmann equation in a parallel electric field. The solutions have been found for electron-phonon interaction via deformation potential. The dispersion relation for coupled charge density and acoustic waves has been analyzed. We have established conditions of amplification of localized acoustic waves under the electron drift for two extreme cases: i) the only lowest two-dimensional subband is populated, ii) a large number of the subbands are populated. We have found that the amplification coefficient of the acoustic waves in THz-rigion is of the order of 100 cm⁻¹. We have discussed the results and compared them with acoustic waves amplification in bulk like semiconductors.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Amplification of localized acoustic waves by the electron drift in a quantum well
Article
published earlier
spellingShingle Amplification of localized acoustic waves by the electron drift in a quantum well
Demidenko, A. A.
Kochelap, V. A.
title Amplification of localized acoustic waves by the electron drift in a quantum well
title_full Amplification of localized acoustic waves by the electron drift in a quantum well
title_fullStr Amplification of localized acoustic waves by the electron drift in a quantum well
title_full_unstemmed Amplification of localized acoustic waves by the electron drift in a quantum well
title_short Amplification of localized acoustic waves by the electron drift in a quantum well
title_sort amplification of localized acoustic waves by the electron drift in a quantum well
url https://nasplib.isofts.kiev.ua/handle/123456789/117857
work_keys_str_mv AT demidenkoaa amplificationoflocalizedacousticwavesbytheelectrondriftinaquantumwell
AT kochelapva amplificationoflocalizedacousticwavesbytheelectrondriftinaquantumwell