Investigation of electron-phonon interaction in bulk and nanostructured semiconductors

In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be successfully applied to bulk and nanosized semiconductors. The idea of the approach...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2007
Автори: Yaremko, A.M., Yukhymchuk, V.O., Dzhagan, V.M., Valakh, M.Ya., Azhniuk, Yu.M., Baran, J., Ratajczak, H., Drozd, M.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117861
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Investigation of electron-phonon interaction in bulk and nanostructured semiconductors / A.M. Yaremko, V.O. Yukhymchuk, V.M. Dzhagan, M.Ya. Valakh, Yu.M. Azhniuk, J. Baran, H. Ratajczak, M. Drozd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 1-5. — Бібліогр.: 13 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Yaremko, A.M.
Yukhymchuk, V.O.
Dzhagan, V.M.
Valakh, M.Ya.
Azhniuk, Yu.M.
Baran, J.
Ratajczak, H.
Drozd, M.
author_facet Yaremko, A.M.
Yukhymchuk, V.O.
Dzhagan, V.M.
Valakh, M.Ya.
Azhniuk, Yu.M.
Baran, J.
Ratajczak, H.
Drozd, M.
citation_txt Investigation of electron-phonon interaction in bulk and nanostructured semiconductors / A.M. Yaremko, V.O. Yukhymchuk, V.M. Dzhagan, M.Ya. Valakh, Yu.M. Azhniuk, J. Baran, H. Ratajczak, M. Drozd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 1-5. — Бібліогр.: 13 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be successfully applied to bulk and nanosized semiconductors. The idea of the approach proposed here is to
 describe the experimental Raman (or absorption) spectra containing the phonon replicas
 theoretically by varying the EPI constant. The main parameter of the theoretical
 expression describing the experimental spectrum is the ratio of EPI constant to the
 frequency of the corresponding phonon mode. Based on the experimental and theoretical results, we have found that decreasing the size of CdSxSe₁₋x QDs embedded in borosilicate glass matrix results in some enhancement of electron-phonon interaction.
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last_indexed 2025-12-02T08:40:12Z
publishDate 2007
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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spelling Yaremko, A.M.
Yukhymchuk, V.O.
Dzhagan, V.M.
Valakh, M.Ya.
Azhniuk, Yu.M.
Baran, J.
Ratajczak, H.
Drozd, M.
2017-05-27T09:44:41Z
2017-05-27T09:44:41Z
2007
Investigation of electron-phonon interaction in bulk and nanostructured semiconductors / A.M. Yaremko, V.O. Yukhymchuk, V.M. Dzhagan, M.Ya. Valakh, Yu.M. Azhniuk, J. Baran, H. Ratajczak, M. Drozd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 1-5. — Бібліогр.: 13 назв. — англ.
1560-8034
PACS 63.20.Dj, 73.40.Lq
https://nasplib.isofts.kiev.ua/handle/123456789/117861
In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be successfully applied to bulk and nanosized semiconductors. The idea of the approach proposed here is to
 describe the experimental Raman (or absorption) spectra containing the phonon replicas
 theoretically by varying the EPI constant. The main parameter of the theoretical
 expression describing the experimental spectrum is the ratio of EPI constant to the
 frequency of the corresponding phonon mode. Based on the experimental and theoretical results, we have found that decreasing the size of CdSxSe₁₋x QDs embedded in borosilicate glass matrix results in some enhancement of electron-phonon interaction.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
Article
published earlier
spellingShingle Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
Yaremko, A.M.
Yukhymchuk, V.O.
Dzhagan, V.M.
Valakh, M.Ya.
Azhniuk, Yu.M.
Baran, J.
Ratajczak, H.
Drozd, M.
title Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_full Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_fullStr Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_full_unstemmed Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_short Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_sort investigation of electron-phonon interaction in bulk and nanostructured semiconductors
url https://nasplib.isofts.kiev.ua/handle/123456789/117861
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