Investigation of electron-phonon interaction in bulk and nanostructured semiconductors

Investigation of electron-phonon interaction in bulk and nanostructured semiconductors

In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be successfully applied to bulk and nanosized semiconductors. The idea of the approach...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2007
Main Authors: Yaremko, A.M., Yukhymchuk, V.O., Dzhagan, V.M., Valakh, M.Ya., Azhniuk, Yu.M., Baran, J., Ratajczak, H., Drozd, M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/117861
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Investigation of electron-phonon interaction in bulk and nanostructured semiconductors / A.M. Yaremko, V.O. Yukhymchuk, V.M. Dzhagan, M.Ya. Valakh, Yu.M. Azhniuk, J. Baran, H. Ratajczak, M. Drozd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 1-5. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117861
record_format dspace
spelling Yaremko, A.M.
Yukhymchuk, V.O.
Dzhagan, V.M.
Valakh, M.Ya.
Azhniuk, Yu.M.
Baran, J.
Ratajczak, H.
Drozd, M.
2017-05-27T09:44:41Z
2017-05-27T09:44:41Z
2007
Investigation of electron-phonon interaction in bulk and nanostructured semiconductors / A.M. Yaremko, V.O. Yukhymchuk, V.M. Dzhagan, M.Ya. Valakh, Yu.M. Azhniuk, J. Baran, H. Ratajczak, M. Drozd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 1-5. — Бібліогр.: 13 назв. — англ.
1560-8034
PACS 63.20.Dj, 73.40.Lq
https://nasplib.isofts.kiev.ua/handle/123456789/117861
In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be successfully applied to bulk and nanosized semiconductors. The idea of the approach proposed here is to describe the experimental Raman (or absorption) spectra containing the phonon replicas theoretically by varying the EPI constant. The main parameter of the theoretical expression describing the experimental spectrum is the ratio of EPI constant to the frequency of the corresponding phonon mode. Based on the experimental and theoretical results, we have found that decreasing the size of CdSxSe₁₋x QDs embedded in borosilicate glass matrix results in some enhancement of electron-phonon interaction.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
spellingShingle Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
Yaremko, A.M.
Yukhymchuk, V.O.
Dzhagan, V.M.
Valakh, M.Ya.
Azhniuk, Yu.M.
Baran, J.
Ratajczak, H.
Drozd, M.
title_short Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_full Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_fullStr Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_full_unstemmed Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_sort investigation of electron-phonon interaction in bulk and nanostructured semiconductors
author Yaremko, A.M.
Yukhymchuk, V.O.
Dzhagan, V.M.
Valakh, M.Ya.
Azhniuk, Yu.M.
Baran, J.
Ratajczak, H.
Drozd, M.
author_facet Yaremko, A.M.
Yukhymchuk, V.O.
Dzhagan, V.M.
Valakh, M.Ya.
Azhniuk, Yu.M.
Baran, J.
Ratajczak, H.
Drozd, M.
publishDate 2007
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be successfully applied to bulk and nanosized semiconductors. The idea of the approach proposed here is to describe the experimental Raman (or absorption) spectra containing the phonon replicas theoretically by varying the EPI constant. The main parameter of the theoretical expression describing the experimental spectrum is the ratio of EPI constant to the frequency of the corresponding phonon mode. Based on the experimental and theoretical results, we have found that decreasing the size of CdSxSe₁₋x QDs embedded in borosilicate glass matrix results in some enhancement of electron-phonon interaction.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117861
citation_txt Investigation of electron-phonon interaction in bulk and nanostructured semiconductors / A.M. Yaremko, V.O. Yukhymchuk, V.M. Dzhagan, M.Ya. Valakh, Yu.M. Azhniuk, J. Baran, H. Ratajczak, M. Drozd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 1-5. — Бібліогр.: 13 назв. — англ.
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first_indexed 2025-12-02T08:40:12Z
last_indexed 2025-12-02T08:40:12Z
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