Investigation of the direct/indirect exciton transition in the double quantum well system based on Cd₁₋yMgyTe/ Cd₁₋xMnxTe in applied magnetic field

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2007
• Автори: Lev, S.B., Sugakov, V.I., Vertsimakha, G.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/117863
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Investigation of the direct/indirect exciton transition in the double quantum well system based on Cd₁₋yMgyTe/ Cd₁₋xMnxTe in applied magnetic field / S.B. Lev, V.I. Sugakov, G.V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 11-15. — Бібліогр.: 20 назв. — англ.

The energy levels, wave functions, and lifetimes of direct and indirect
 excitons in a CdTe-based double quantum well system with non-magnetic (Mg) and
 magnetic (Mn) ions in a magnetic field are found. It is shown that, in an external
 magnetic field greater than some critical value, the lowest excited state of the system
 becomes the indirect exciton state. Since the indirect exciton lifetime exceeds the direct
 exciton one by a few orders of magnitude, the magnetic field can significantly influence
 optical properties of the system (for example, the luminescence intensity). The realistic
 range of parameters of a quantum well (well and barrier widths, Mn and Mg concentrations, the magnetic field strength), in which the exciton lowest state is the indirect exciton state, is calculated.