Vlaskina, S., Vlaskin, V., Podlasov, S., Rodionov, V., & Svechnikov, G. (2007). Boron, aluminum, nitrogen, oxygen impurities in silicon carbide. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationVlaskina, S.I, V.I Vlaskin, S.A Podlasov, V.E Rodionov, and G.S Svechnikov. "Boron, Aluminum, Nitrogen, Oxygen Impurities in Silicon Carbide." Semiconductor Physics Quantum Electronics & Optoelectronics 2007.
MLA (8th ed.) CitationVlaskina, S.I, et al. "Boron, Aluminum, Nitrogen, Oxygen Impurities in Silicon Carbide." Semiconductor Physics Quantum Electronics & Optoelectronics, 2007.
Warning: These citations may not always be 100% accurate.