High-temperature configurations of dimers in Si (001) surface layers
Molecular Dynamics (MD) simulation of Si (001) surface layers was performed. In the modified algorithm of MD the potential is corrected on each step of calculation. The corrections account the re-hybridization of chemical bonds in relaxation processes. It was found that the high-temperature relaxati...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2003 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117867 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | High-temperature configurations of dimers in Si (001) surface layers / A.E. Kiv, T.I. Maksymova, N.V. Moiseenko, V.N. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 14-18. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862699829286666240 |
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| author | Kiv, A.E. Maksymova, T.I. Moiseenko, N.V. Soloviev, V.N. |
| author_facet | Kiv, A.E. Maksymova, T.I. Moiseenko, N.V. Soloviev, V.N. |
| citation_txt | High-temperature configurations of dimers in Si (001) surface layers / A.E. Kiv, T.I. Maksymova, N.V. Moiseenko, V.N. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 14-18. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Molecular Dynamics (MD) simulation of Si (001) surface layers was performed. In the modified algorithm of MD the potential is corrected on each step of calculation. The corrections account the re-hybridization of chemical bonds in relaxation processes. It was found that the high-temperature relaxation of Si surface layers leads to formation of Quasi-Disordered Phase (QDP). QDP is spread from the first layer up to the forth-fifth layer. In all these layers dimers are formed. Their characteristics (length distribution and space orientation) change from layer to layer. They differ significantly from dimers formed at lower temperatures.
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| first_indexed | 2025-12-07T16:37:07Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-117867 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:37:07Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kiv, A.E. Maksymova, T.I. Moiseenko, N.V. Soloviev, V.N. 2017-05-27T09:57:33Z 2017-05-27T09:57:33Z 2003 High-temperature configurations of dimers in Si (001) surface layers / A.E. Kiv, T.I. Maksymova, N.V. Moiseenko, V.N. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 14-18. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 68.35.Bs PACS: 71.15.Pd https://nasplib.isofts.kiev.ua/handle/123456789/117867 Molecular Dynamics (MD) simulation of Si (001) surface layers was performed. In the modified algorithm of MD the potential is corrected on each step of calculation. The corrections account the re-hybridization of chemical bonds in relaxation processes. It was found that the high-temperature relaxation of Si surface layers leads to formation of Quasi-Disordered Phase (QDP). QDP is spread from the first layer up to the forth-fifth layer. In all these layers dimers are formed. Their characteristics (length distribution and space orientation) change from layer to layer. They differ significantly from dimers formed at lower temperatures. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics High-temperature configurations of dimers in Si (001) surface layers Article published earlier |
| spellingShingle | High-temperature configurations of dimers in Si (001) surface layers Kiv, A.E. Maksymova, T.I. Moiseenko, N.V. Soloviev, V.N. |
| title | High-temperature configurations of dimers in Si (001) surface layers |
| title_full | High-temperature configurations of dimers in Si (001) surface layers |
| title_fullStr | High-temperature configurations of dimers in Si (001) surface layers |
| title_full_unstemmed | High-temperature configurations of dimers in Si (001) surface layers |
| title_short | High-temperature configurations of dimers in Si (001) surface layers |
| title_sort | high-temperature configurations of dimers in si (001) surface layers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117867 |
| work_keys_str_mv | AT kivae hightemperatureconfigurationsofdimersinsi001surfacelayers AT maksymovati hightemperatureconfigurationsofdimersinsi001surfacelayers AT moiseenkonv hightemperatureconfigurationsofdimersinsi001surfacelayers AT solovievvn hightemperatureconfigurationsofdimersinsi001surfacelayers |