Overheating effect and hole-phonon interaction in SiGe heterostructures

The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum
 well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude
 was used as a «thermometer» to measure the temperature of overheated ho...

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Veröffentlicht in:Физика низких температур
Datum:2008
Hauptverfasser: Berkutov, I.B., Andrievskii, V.V., Komnik, Yu.F., Myronov, M., Mironov, O.A.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2008
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117882
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Beschreibung
Zusammenfassung:The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum
 well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude
 was used as a «thermometer» to measure the temperature of overheated holes. The temperature dependence
 of the hole–phonon relaxation time was found using analysis of dependence of amplitude of SdH oscillations
 change on temperature and applied electrical field. Analysis of the temperature dependence of the hole–phonon
 relaxation time exhibits transition of 2D system from regime of «partial inelasticity» to conditions of
 small angle scattering.
ISSN:0132-6414