Overheating effect and hole-phonon interaction in SiGe heterostructures
The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum
 well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude
 was used as a «thermometer» to measure the temperature of overheated ho...
Saved in:
| Published in: | Физика низких температур |
|---|---|
| Date: | 2008 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2008
|
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117882 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum
well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude
was used as a «thermometer» to measure the temperature of overheated holes. The temperature dependence
of the hole–phonon relaxation time was found using analysis of dependence of amplitude of SdH oscillations
change on temperature and applied electrical field. Analysis of the temperature dependence of the hole–phonon
relaxation time exhibits transition of 2D system from regime of «partial inelasticity» to conditions of
small angle scattering.
|
|---|---|
| ISSN: | 0132-6414 |