Overheating effect and hole-phonon interaction in SiGe heterostructures
The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude was used as a «thermometer» to measure the temperature of overheated holes. The tempera...
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| Datum: | 2008 |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2008
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| Zitieren: | Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ. |
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Berkutov, I.B. Andrievskii, V.V. Komnik, Yu.F. Myronov, M. Mironov, O.A. 2017-05-27T10:53:15Z 2017-05-27T10:53:15Z 2008 Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ. 0132-6414 PACS: 72.15.Lh;72.20.Ht;72.20.My https://nasplib.isofts.kiev.ua/handle/123456789/117882 The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude was used as a «thermometer» to measure the temperature of overheated holes. The temperature dependence of the hole–phonon relaxation time was found using analysis of dependence of amplitude of SdH oscillations change on temperature and applied electrical field. Analysis of the temperature dependence of the hole–phonon relaxation time exhibits transition of 2D system from regime of «partial inelasticity» to conditions of small angle scattering. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Низкоразмерные и неупорядоченные системы Overheating effect and hole-phonon interaction in SiGe heterostructures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Overheating effect and hole-phonon interaction in SiGe heterostructures |
| spellingShingle |
Overheating effect and hole-phonon interaction in SiGe heterostructures Berkutov, I.B. Andrievskii, V.V. Komnik, Yu.F. Myronov, M. Mironov, O.A. Низкоразмерные и неупорядоченные системы |
| title_short |
Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_full |
Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_fullStr |
Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_full_unstemmed |
Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_sort |
overheating effect and hole-phonon interaction in sige heterostructures |
| author |
Berkutov, I.B. Andrievskii, V.V. Komnik, Yu.F. Myronov, M. Mironov, O.A. |
| author_facet |
Berkutov, I.B. Andrievskii, V.V. Komnik, Yu.F. Myronov, M. Mironov, O.A. |
| topic |
Низкоразмерные и неупорядоченные системы |
| topic_facet |
Низкоразмерные и неупорядоченные системы |
| publishDate |
2008 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum
well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude
was used as a «thermometer» to measure the temperature of overheated holes. The temperature dependence
of the hole–phonon relaxation time was found using analysis of dependence of amplitude of SdH oscillations
change on temperature and applied electrical field. Analysis of the temperature dependence of the hole–phonon
relaxation time exhibits transition of 2D system from regime of «partial inelasticity» to conditions of
small angle scattering.
|
| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117882 |
| citation_txt |
Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ. |
| work_keys_str_mv |
AT berkutovib overheatingeffectandholephononinteractioninsigeheterostructures AT andrievskiivv overheatingeffectandholephononinteractioninsigeheterostructures AT komnikyuf overheatingeffectandholephononinteractioninsigeheterostructures AT myronovm overheatingeffectandholephononinteractioninsigeheterostructures AT mironovoa overheatingeffectandholephononinteractioninsigeheterostructures |
| first_indexed |
2025-12-07T17:59:33Z |
| last_indexed |
2025-12-07T17:59:33Z |
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