Overheating effect and hole-phonon interaction in SiGe heterostructures
The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum
 well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude
 was used as a «thermometer» to measure the temperature of overheated ho...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2008 |
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| Sprache: | Englisch |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2008
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862715638281142272 |
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| author | Berkutov, I.B. Andrievskii, V.V. Komnik, Yu.F. Myronov, M. Mironov, O.A. |
| author_facet | Berkutov, I.B. Andrievskii, V.V. Komnik, Yu.F. Myronov, M. Mironov, O.A. |
| citation_txt | Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum
well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude
was used as a «thermometer» to measure the temperature of overheated holes. The temperature dependence
of the hole–phonon relaxation time was found using analysis of dependence of amplitude of SdH oscillations
change on temperature and applied electrical field. Analysis of the temperature dependence of the hole–phonon
relaxation time exhibits transition of 2D system from regime of «partial inelasticity» to conditions of
small angle scattering.
|
| first_indexed | 2025-12-07T17:59:33Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117882 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T17:59:33Z |
| publishDate | 2008 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Berkutov, I.B. Andrievskii, V.V. Komnik, Yu.F. Myronov, M. Mironov, O.A. 2017-05-27T10:53:15Z 2017-05-27T10:53:15Z 2008 Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ. 0132-6414 PACS: 72.15.Lh;72.20.Ht;72.20.My https://nasplib.isofts.kiev.ua/handle/123456789/117882 The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum
 well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude
 was used as a «thermometer» to measure the temperature of overheated holes. The temperature dependence
 of the hole–phonon relaxation time was found using analysis of dependence of amplitude of SdH oscillations
 change on temperature and applied electrical field. Analysis of the temperature dependence of the hole–phonon
 relaxation time exhibits transition of 2D system from regime of «partial inelasticity» to conditions of
 small angle scattering. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Низкоразмерные и неупорядоченные системы Overheating effect and hole-phonon interaction in SiGe heterostructures Article published earlier |
| spellingShingle | Overheating effect and hole-phonon interaction in SiGe heterostructures Berkutov, I.B. Andrievskii, V.V. Komnik, Yu.F. Myronov, M. Mironov, O.A. Низкоразмерные и неупорядоченные системы |
| title | Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_full | Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_fullStr | Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_full_unstemmed | Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_short | Overheating effect and hole-phonon interaction in SiGe heterostructures |
| title_sort | overheating effect and hole-phonon interaction in sige heterostructures |
| topic | Низкоразмерные и неупорядоченные системы |
| topic_facet | Низкоразмерные и неупорядоченные системы |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117882 |
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