Overheating effect and hole-phonon interaction in SiGe heterostructures

• Published in: Физика низких температур
• Date: 2008
• Main Authors: Berkutov, I.B., Andrievskii, V.V., Komnik, Yu.F., Myronov, M., Mironov, O.A.
• Format: Article
• Language: English
• Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2008
• Subjects: Низкоразмерные и неупорядоченные системы
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117882
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ.

The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum
 well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude
 was used as a «thermometer» to measure the temperature of overheated ho...