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The influence of irradiation by electrons and γ-quanta on photoelectrical and optical properties of epitaxial Pb₁₋xMnxTe film

We have studied the effect of electron irradiation on photoelectrical and optical properties of Pb₁₋xMnxTe (0.01 ≤ x ≤ 0.05) epitaxial films containing 0.5…1 at. % of gallium with thicknesses of 1…5 µm, obtained by the method of molecular beam epitaxy on substrates BaF₂ (III).

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2007
Hauptverfasser: Abbasov, Sh.M., Nuruyev, I.R., Tagiyev, T.B., Agaverdiyeva, G.T., Kerimova, T.I., Ismayilova, G.T.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117888
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The influence of irradiation by electrons and γ-quanta on photoelectrical and optical properties of epitaxial Pb₁₋xMnxTe film / Sh.M. Abbasov, I.R. Nuruyev*, T.B. Tagiyev, G.T. Agaverdiyeva, T.I. Kerimova,G.T. Ismayilova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 26-28. — Бібліогр.: 6 назв. — англ.

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