Isothermal growth kinetics of CdxHg₁₋xTe LPE layers
Within the diffusion-limited growth model, the kinetic analysis of the LPE process for CdxHg₁₋xTe solid solutions is carried out. It is assumed that a phase equilibrium exists on the interface, and the concentrations of components are connected by the equations of phase equilibria in the frame...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2007 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117889 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Isothermal growth kinetics of CdxHg₁₋xTe LPE layers / P.P. Moskvin, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 29-33. — Бібліогр.: 15 назв. — англ. |
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Moskvin, P.P. Khodakovsky, V.V. 2017-05-27T11:03:25Z 2017-05-27T11:03:25Z 2007 Isothermal growth kinetics of CdxHg₁₋xTe LPE layers / P.P. Moskvin, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 29-33. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 64.90.+ b https://nasplib.isofts.kiev.ua/handle/123456789/117889 Within the diffusion-limited growth model, the kinetic analysis of the LPE process for CdxHg₁₋xTe solid solutions is carried out. It is assumed that a phase equilibrium exists on the interface, and the concentrations of components are connected by the equations of phase equilibria in the frame of the model of polyassociated solutions. These equations serve as the boundary conditions in solving the diffusion mass transfer problem. The developed thermodynamic model of growth allowed us to achieve the precision description of solid solutions, in particular to predict the regimes of the growth of layers with a given composition in the Cd-Hg-Te system. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Isothermal growth kinetics of CdxHg₁₋xTe LPE layers Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Isothermal growth kinetics of CdxHg₁₋xTe LPE layers |
| spellingShingle |
Isothermal growth kinetics of CdxHg₁₋xTe LPE layers Moskvin, P.P. Khodakovsky, V.V. |
| title_short |
Isothermal growth kinetics of CdxHg₁₋xTe LPE layers |
| title_full |
Isothermal growth kinetics of CdxHg₁₋xTe LPE layers |
| title_fullStr |
Isothermal growth kinetics of CdxHg₁₋xTe LPE layers |
| title_full_unstemmed |
Isothermal growth kinetics of CdxHg₁₋xTe LPE layers |
| title_sort |
isothermal growth kinetics of cdxhg₁₋xte lpe layers |
| author |
Moskvin, P.P. Khodakovsky, V.V. |
| author_facet |
Moskvin, P.P. Khodakovsky, V.V. |
| publishDate |
2007 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Within the diffusion-limited growth model, the kinetic analysis of the LPE
process for CdxHg₁₋xTe solid solutions is carried out. It is assumed that a phase
equilibrium exists on the interface, and the concentrations of components are connected
by the equations of phase equilibria in the frame of the model of polyassociated
solutions. These equations serve as the boundary conditions in solving the diffusion mass transfer problem. The developed thermodynamic model of growth allowed us to achieve the precision description of solid solutions, in particular to predict the regimes of the growth of layers with a given composition in the Cd-Hg-Te system.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117889 |
| fulltext |
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| citation_txt |
Isothermal growth kinetics of CdxHg₁₋xTe LPE layers / P.P. Moskvin, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 29-33. — Бібліогр.: 15 назв. — англ. |
| work_keys_str_mv |
AT moskvinpp isothermalgrowthkineticsofcdxhg1xtelpelayers AT khodakovskyvv isothermalgrowthkineticsofcdxhg1xtelpelayers |
| first_indexed |
2025-11-24T11:37:45Z |
| last_indexed |
2025-11-24T11:37:45Z |
| _version_ |
1850845620469760000 |