Isothermal growth kinetics of CdxHg₁₋xTe LPE layers
Within the diffusion-limited growth model, the kinetic analysis of the LPE
 process for CdxHg₁₋xTe solid solutions is carried out. It is assumed that a phase
 equilibrium exists on the interface, and the concentrations of components are connected
 by the equations of phase...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2007 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117889 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Isothermal growth kinetics of CdxHg₁₋xTe LPE layers / P.P. Moskvin, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 29-33. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862536576544800768 |
|---|---|
| author | Moskvin, P.P. Khodakovsky, V.V. |
| author_facet | Moskvin, P.P. Khodakovsky, V.V. |
| citation_txt | Isothermal growth kinetics of CdxHg₁₋xTe LPE layers / P.P. Moskvin, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 29-33. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Within the diffusion-limited growth model, the kinetic analysis of the LPE
process for CdxHg₁₋xTe solid solutions is carried out. It is assumed that a phase
equilibrium exists on the interface, and the concentrations of components are connected
by the equations of phase equilibria in the frame of the model of polyassociated
solutions. These equations serve as the boundary conditions in solving the diffusion mass transfer problem. The developed thermodynamic model of growth allowed us to achieve the precision description of solid solutions, in particular to predict the regimes of the growth of layers with a given composition in the Cd-Hg-Te system.
|
| first_indexed | 2025-11-24T11:37:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117889 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T11:37:45Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Moskvin, P.P. Khodakovsky, V.V. 2017-05-27T11:03:25Z 2017-05-27T11:03:25Z 2007 Isothermal growth kinetics of CdxHg₁₋xTe LPE layers / P.P. Moskvin, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 29-33. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 64.90.+ b https://nasplib.isofts.kiev.ua/handle/123456789/117889 Within the diffusion-limited growth model, the kinetic analysis of the LPE
 process for CdxHg₁₋xTe solid solutions is carried out. It is assumed that a phase
 equilibrium exists on the interface, and the concentrations of components are connected
 by the equations of phase equilibria in the frame of the model of polyassociated
 solutions. These equations serve as the boundary conditions in solving the diffusion mass transfer problem. The developed thermodynamic model of growth allowed us to achieve the precision description of solid solutions, in particular to predict the regimes of the growth of layers with a given composition in the Cd-Hg-Te system. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Isothermal growth kinetics of CdxHg₁₋xTe LPE layers Article published earlier |
| spellingShingle | Isothermal growth kinetics of CdxHg₁₋xTe LPE layers Moskvin, P.P. Khodakovsky, V.V. |
| title | Isothermal growth kinetics of CdxHg₁₋xTe LPE layers |
| title_full | Isothermal growth kinetics of CdxHg₁₋xTe LPE layers |
| title_fullStr | Isothermal growth kinetics of CdxHg₁₋xTe LPE layers |
| title_full_unstemmed | Isothermal growth kinetics of CdxHg₁₋xTe LPE layers |
| title_short | Isothermal growth kinetics of CdxHg₁₋xTe LPE layers |
| title_sort | isothermal growth kinetics of cdxhg₁₋xte lpe layers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117889 |
| work_keys_str_mv | AT moskvinpp isothermalgrowthkineticsofcdxhg1xtelpelayers AT khodakovskyvv isothermalgrowthkineticsofcdxhg1xtelpelayers |