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Isothermal growth kinetics of CdxHg₁₋xTe LPE layers

Within the diffusion-limited growth model, the kinetic analysis of the LPE process for CdxHg₁₋xTe solid solutions is carried out. It is assumed that a phase equilibrium exists on the interface, and the concentrations of components are connected by the equations of phase...

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Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2007
Main Authors:	Moskvin, P.P., Khodakovsky, V.V.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/117889
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Isothermal growth kinetics of CdxHg₁₋xTe LPE layers / P.P. Moskvin, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 29-33. — Бібліогр.: 15 назв. — англ.

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