Lysenko, V., Tyagulsky, I., Osiyuk, I., & Nazarov, A. (2007). Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Lysenko, V.S, I.P Tyagulsky, I.N Osiyuk, und A.N Nazarov. "Influence of Traps in Gate Oxide-Si Film Transition Layers on FD MOSFET's Characteristics at Cryogenic Emperatures." Semiconductor Physics Quantum Electronics & Optoelectronics 2007.
MLA-Zitierstil (8. Ausg.)Lysenko, V.S, et al. "Influence of Traps in Gate Oxide-Si Film Transition Layers on FD MOSFET's Characteristics at Cryogenic Emperatures." Semiconductor Physics Quantum Electronics & Optoelectronics, 2007.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.