Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures
The results of experiments on the influence of recharging the electron traps in a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It is shown that the low-dose gammaradiation improves electrophysical parameters o...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2007 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117890 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures / V.S. Lysenko, I.P. Tyagulsky, I.N. Osiyuk, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 34-39. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117890 |
|---|---|
| record_format |
dspace |
| spelling |
Lysenko, V.S. Tyagulsky, I.P. Osiyuk, I.N. Nazarov, A.N. 2017-05-27T11:04:20Z 2017-05-27T11:04:20Z 2007 Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures / V.S. Lysenko, I.P. Tyagulsky, I.N. Osiyuk, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 34-39. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 68.35.-c, 72.20.Jv, 73.20.-r, 73.40.-c, 85.30.Tv https://nasplib.isofts.kiev.ua/handle/123456789/117890 The results of experiments on the influence of recharging the electron traps in a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It is shown that the low-dose gammaradiation improves electrophysical parameters of the transition layer. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures |
| spellingShingle |
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures Lysenko, V.S. Tyagulsky, I.P. Osiyuk, I.N. Nazarov, A.N. |
| title_short |
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures |
| title_full |
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures |
| title_fullStr |
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures |
| title_full_unstemmed |
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures |
| title_sort |
influence of traps in gate oxide-si film transition layers on fd mosfet's characteristics at cryogenic emperatures |
| author |
Lysenko, V.S. Tyagulsky, I.P. Osiyuk, I.N. Nazarov, A.N. |
| author_facet |
Lysenko, V.S. Tyagulsky, I.P. Osiyuk, I.N. Nazarov, A.N. |
| publishDate |
2007 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The results of experiments on the influence of recharging the electron traps in
a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon
in insulator MOSFET devices are presented. It is shown that the low-dose gammaradiation
improves electrophysical parameters of the transition layer.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117890 |
| citation_txt |
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures / V.S. Lysenko, I.P. Tyagulsky, I.N. Osiyuk, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 34-39. — Бібліогр.: 7 назв. — англ. |
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| first_indexed |
2025-12-07T20:05:37Z |
| last_indexed |
2025-12-07T20:05:37Z |
| _version_ |
1850881277515792384 |