Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures
The results of experiments on the influence of recharging the electron traps in
 a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon
 in insulator MOSFET devices are presented. It is shown that the low-dose gammaradiation
 improves elec...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2007 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117890 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures / V.S. Lysenko, I.P. Tyagulsky, I.N. Osiyuk, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 34-39. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862738796379897856 |
|---|---|
| author | Lysenko, V.S. Tyagulsky, I.P. Osiyuk, I.N. Nazarov, A.N. |
| author_facet | Lysenko, V.S. Tyagulsky, I.P. Osiyuk, I.N. Nazarov, A.N. |
| citation_txt | Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures / V.S. Lysenko, I.P. Tyagulsky, I.N. Osiyuk, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 34-39. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The results of experiments on the influence of recharging the electron traps in
a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon
in insulator MOSFET devices are presented. It is shown that the low-dose gammaradiation
improves electrophysical parameters of the transition layer.
|
| first_indexed | 2025-12-07T20:05:37Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117890 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:05:37Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Lysenko, V.S. Tyagulsky, I.P. Osiyuk, I.N. Nazarov, A.N. 2017-05-27T11:04:20Z 2017-05-27T11:04:20Z 2007 Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures / V.S. Lysenko, I.P. Tyagulsky, I.N. Osiyuk, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 34-39. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 68.35.-c, 72.20.Jv, 73.20.-r, 73.40.-c, 85.30.Tv https://nasplib.isofts.kiev.ua/handle/123456789/117890 The results of experiments on the influence of recharging the electron traps in
 a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon
 in insulator MOSFET devices are presented. It is shown that the low-dose gammaradiation
 improves electrophysical parameters of the transition layer. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures Article published earlier |
| spellingShingle | Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures Lysenko, V.S. Tyagulsky, I.P. Osiyuk, I.N. Nazarov, A.N. |
| title | Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures |
| title_full | Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures |
| title_fullStr | Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures |
| title_full_unstemmed | Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures |
| title_short | Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures |
| title_sort | influence of traps in gate oxide-si film transition layers on fd mosfet's characteristics at cryogenic emperatures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117890 |
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