Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Lysenko, V.S., Tyagulsky, I.P., Osiyuk, I.N., Nazarov, A.N.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117890
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures / V.S. Lysenko, I.P. Tyagulsky, I.N. Osiyuk, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 34-39. — Бібліогр.: 7 назв. — англ.

The results of experiments on the influence of recharging the electron traps in
 a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon
 in insulator MOSFET devices are presented. It is shown that the low-dose gammaradiation
 improves elec...