Charge characteristics of the MOS structures with oxide films containing Si nanocrystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• ISSN: 1560-8034
• Hauptverfasser: Begun, E.V., Bratus’, O.L., Evtukh, A.A., Kaganovich, E.B., Manoilov, E.G.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117892
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Charge characteristics of the MOS structures with oxide films containing Si nanocrystals / Е.V. Begun, O.L. Bratus', A.A. Evtukh, E.B. Kaganovich, E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 46-50. — Бібліогр.: 10 назв. — англ.

The processes of charge accumulation in the MOS structures with SiO₂ films
 containing Si nanocrystals are investigated, depending on the conditions of their
 formation by pulsed laser deposition. High-frequency capacity-voltage characteristics of
 structures with the different thicknesses of films, sizes of Si nanocrystals, and their
 densities in the case of doping the films with gold and without it are measured. It is
 shown that the positive and negative charges are built-in, respectively, in the undoped
 films and those doped with gold. At the record of C-V curves, the accumulation of a
 positive charge is observed. The value of accumulated charge is higher in thin films and
 in the films doped with gold. The obtained results testify the possibility of the use of
 pulsed laser deposition for creation of memory structures based on the charge capture by
 Si nanocrystals.