Charge characteristics of the MOS structures with oxide films containing Si nanocrystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Begun, E.V., Bratus’, O.L., Evtukh, A.A., Kaganovich, E.B., Manoilov, E.G.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117892
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Charge characteristics of the MOS structures with oxide films containing Si nanocrystals / Е.V. Begun, O.L. Bratus', A.A. Evtukh, E.B. Kaganovich, E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 46-50. — Бібліогр.: 10 назв. — англ.

The processes of charge accumulation in the MOS structures with SiO₂ films containing Si nanocrystals are investigated, depending on the conditions of their formation by pulsed laser deposition. High-frequency capacity-voltage characteristics of structures with the different thicknesses of films,...