Frequency-dependent dielectric coefficients of TlInS₂ amorphous films
The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac) of amorphous films prepared by evaporation of TlInS₂ has been investigated at frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > 10⁶ Hz, relaxation losses take place. It is established that the hopping...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2007 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117916 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Frequency-dependent dielectric coefficients of TlInS₂ amorphous films / S.N. Mustafaeva, M.M. Asadov, K.Sh. Qahramanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 58-61. — Бібліогр.: 11 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-117916 |
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Mustafaeva, S.N. Asadov, M.M. Qahramanov, K.Sh. 2017-05-27T12:19:23Z 2017-05-27T12:19:23Z 2007 Frequency-dependent dielectric coefficients of TlInS₂ amorphous films / S.N. Mustafaeva, M.M. Asadov, K.Sh. Qahramanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 58-61. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 71.20.Nr; 71.23.Cq; 71.55.Jv; 72.20.Ee; 72.30.+q; 73.20.At; 73.20.Hb https://nasplib.isofts.kiev.ua/handle/123456789/117916 The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac) of amorphous films prepared by evaporation of TlInS₂ has been investigated at frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > 10⁶ Hz, relaxation losses take place. It is established that the hopping conduction near the Fermi level occurs in TlInS₂ amorphous films at frequencies up to 3⋅10⁶ Hz. The density of localized states at the Fermi level, the mean time for phonon-assisted tunneling, and the hopping distance have been evaluated for polymorphic TlInS₂ films. For frequencies above 10⁷ Hz, σac( f ) ~ f₂. Such a behavior is caused by optical transitions in TlInS₂ amorphous films. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Frequency-dependent dielectric coefficients of TlInS₂ amorphous films Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Frequency-dependent dielectric coefficients of TlInS₂ amorphous films |
| spellingShingle |
Frequency-dependent dielectric coefficients of TlInS₂ amorphous films Mustafaeva, S.N. Asadov, M.M. Qahramanov, K.Sh. |
| title_short |
Frequency-dependent dielectric coefficients of TlInS₂ amorphous films |
| title_full |
Frequency-dependent dielectric coefficients of TlInS₂ amorphous films |
| title_fullStr |
Frequency-dependent dielectric coefficients of TlInS₂ amorphous films |
| title_full_unstemmed |
Frequency-dependent dielectric coefficients of TlInS₂ amorphous films |
| title_sort |
frequency-dependent dielectric coefficients of tlins₂ amorphous films |
| author |
Mustafaeva, S.N. Asadov, M.M. Qahramanov, K.Sh. |
| author_facet |
Mustafaeva, S.N. Asadov, M.M. Qahramanov, K.Sh. |
| publishDate |
2007 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac)
of amorphous films prepared by evaporation of TlInS₂ has been investigated at
frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > 10⁶ Hz, relaxation losses take
place. It is established that the hopping conduction near the Fermi level occurs in TlInS₂
amorphous films at frequencies up to 3⋅10⁶ Hz. The density of localized states at the
Fermi level, the mean time for phonon-assisted tunneling, and the hopping distance have been evaluated for polymorphic TlInS₂ films. For frequencies above 10⁷ Hz, σac( f ) ~ f₂.
Such a behavior is caused by optical transitions in TlInS₂ amorphous films.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117916 |
| citation_txt |
Frequency-dependent dielectric coefficients of TlInS₂ amorphous films / S.N. Mustafaeva, M.M. Asadov, K.Sh. Qahramanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 58-61. — Бібліогр.: 11 назв. — англ. |
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2025-11-30T11:33:19Z |
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2025-11-30T11:33:19Z |
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