Frequency-dependent dielectric coefficients of TlInS₂ amorphous films
The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac)
 of amorphous films prepared by evaporation of TlInS₂ has been investigated at
 frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > 10⁶ Hz, relaxation losses take
 place. It is estab...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2007 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117916 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Frequency-dependent dielectric coefficients of TlInS₂ amorphous films / S.N. Mustafaeva, M.M. Asadov, K.Sh. Qahramanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 58-61. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862631601465196544 |
|---|---|
| author | Mustafaeva, S.N. Asadov, M.M. Qahramanov, K.Sh. |
| author_facet | Mustafaeva, S.N. Asadov, M.M. Qahramanov, K.Sh. |
| citation_txt | Frequency-dependent dielectric coefficients of TlInS₂ amorphous films / S.N. Mustafaeva, M.M. Asadov, K.Sh. Qahramanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 58-61. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac)
of amorphous films prepared by evaporation of TlInS₂ has been investigated at
frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > 10⁶ Hz, relaxation losses take
place. It is established that the hopping conduction near the Fermi level occurs in TlInS₂
amorphous films at frequencies up to 3⋅10⁶ Hz. The density of localized states at the
Fermi level, the mean time for phonon-assisted tunneling, and the hopping distance have been evaluated for polymorphic TlInS₂ films. For frequencies above 10⁷ Hz, σac( f ) ~ f₂.
Such a behavior is caused by optical transitions in TlInS₂ amorphous films.
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| first_indexed | 2025-11-30T11:33:19Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117916 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T11:33:19Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Mustafaeva, S.N. Asadov, M.M. Qahramanov, K.Sh. 2017-05-27T12:19:23Z 2017-05-27T12:19:23Z 2007 Frequency-dependent dielectric coefficients of TlInS₂ amorphous films / S.N. Mustafaeva, M.M. Asadov, K.Sh. Qahramanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 58-61. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 71.20.Nr; 71.23.Cq; 71.55.Jv; 72.20.Ee; 72.30.+q; 73.20.At; 73.20.Hb https://nasplib.isofts.kiev.ua/handle/123456789/117916 The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac)
 of amorphous films prepared by evaporation of TlInS₂ has been investigated at
 frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > 10⁶ Hz, relaxation losses take
 place. It is established that the hopping conduction near the Fermi level occurs in TlInS₂
 amorphous films at frequencies up to 3⋅10⁶ Hz. The density of localized states at the
 Fermi level, the mean time for phonon-assisted tunneling, and the hopping distance have been evaluated for polymorphic TlInS₂ films. For frequencies above 10⁷ Hz, σac( f ) ~ f₂.
 Such a behavior is caused by optical transitions in TlInS₂ amorphous films. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Frequency-dependent dielectric coefficients of TlInS₂ amorphous films Article published earlier |
| spellingShingle | Frequency-dependent dielectric coefficients of TlInS₂ amorphous films Mustafaeva, S.N. Asadov, M.M. Qahramanov, K.Sh. |
| title | Frequency-dependent dielectric coefficients of TlInS₂ amorphous films |
| title_full | Frequency-dependent dielectric coefficients of TlInS₂ amorphous films |
| title_fullStr | Frequency-dependent dielectric coefficients of TlInS₂ amorphous films |
| title_full_unstemmed | Frequency-dependent dielectric coefficients of TlInS₂ amorphous films |
| title_short | Frequency-dependent dielectric coefficients of TlInS₂ amorphous films |
| title_sort | frequency-dependent dielectric coefficients of tlins₂ amorphous films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117916 |
| work_keys_str_mv | AT mustafaevasn frequencydependentdielectriccoefficientsoftlins2amorphousfilms AT asadovmm frequencydependentdielectriccoefficientsoftlins2amorphousfilms AT qahramanovksh frequencydependentdielectriccoefficientsoftlins2amorphousfilms |