Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate
The systems “thin Ni film – lithium niobate” and “thin Pd film – lithium
 tantalate” are implanted by Ar⁺ ions with an energy of 100 keV and a dose of 10¹⁶ cm⁻².
 Analyses of the systems by AFM and SEM have shown that the ion implantation
 essentially modifies the near-surfac...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2007 |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117919 |
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| Zitieren: | Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate / V.O. Lysiuk, V.S. Staschuk, M.I. Kluy, O.V. Vakulenko, L.V. Poperenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 76-80. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862711272595783680 |
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| author | Lysiuk, V.O. Staschuk, V.S. Kluy, M.I. Vakulenko, O.V. Poperenko, L.V. |
| author_facet | Lysiuk, V.O. Staschuk, V.S. Kluy, M.I. Vakulenko, O.V. Poperenko, L.V. |
| citation_txt | Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate / V.O. Lysiuk, V.S. Staschuk, M.I. Kluy, O.V. Vakulenko, L.V. Poperenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 76-80. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The systems “thin Ni film – lithium niobate” and “thin Pd film – lithium
tantalate” are implanted by Ar⁺ ions with an energy of 100 keV and a dose of 10¹⁶ cm⁻².
Analyses of the systems by AFM and SEM have shown that the ion implantation
essentially modifies the near-surface structure resulting in a change of its optical,
electrical, and mechanical properties. Strong difference in the near-surface structures
between implanted systems with Ni or Pd thin films is observed. Such a difference is
explained by the heterogeneity of an ion beam and different properties of the materials.
The application to the development of high-sensitive pyroelectric detectors with high
damage threshold is proposed.
|
| first_indexed | 2025-12-07T17:30:09Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117919 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:30:09Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Lysiuk, V.O. Staschuk, V.S. Kluy, M.I. Vakulenko, O.V. Poperenko, L.V. 2017-05-27T12:22:27Z 2017-05-27T12:22:27Z 2007 Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate / V.O. Lysiuk, V.S. Staschuk, M.I. Kluy, O.V. Vakulenko, L.V. Poperenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 76-80. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 68.55.Ln, 85.60.Gz https://nasplib.isofts.kiev.ua/handle/123456789/117919 The systems “thin Ni film – lithium niobate” and “thin Pd film – lithium
 tantalate” are implanted by Ar⁺ ions with an energy of 100 keV and a dose of 10¹⁶ cm⁻².
 Analyses of the systems by AFM and SEM have shown that the ion implantation
 essentially modifies the near-surface structure resulting in a change of its optical,
 electrical, and mechanical properties. Strong difference in the near-surface structures
 between implanted systems with Ni or Pd thin films is observed. Such a difference is
 explained by the heterogeneity of an ion beam and different properties of the materials.
 The application to the development of high-sensitive pyroelectric detectors with high
 damage threshold is proposed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate Article published earlier |
| spellingShingle | Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate Lysiuk, V.O. Staschuk, V.S. Kluy, M.I. Vakulenko, O.V. Poperenko, L.V. |
| title | Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate |
| title_full | Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate |
| title_fullStr | Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate |
| title_full_unstemmed | Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate |
| title_short | Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate |
| title_sort | influence of ion implantation on the near-surface structure of thin ni and pd films on lithium niobate and lithium tantalate |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117919 |
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