Organic iso-type pentacene – lead phthalocyanine heterostructures

The photovoltaic properties of organic iso-type heterostructures based on
 pentacene (Pn) and lead phthalocyanine (PbPc) prepared by thermal deposition at
 different substrate temperatures (Ts) are investigated. It is shown that, at modulated
 illumination for Pn/PbPc heteros...

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Збережено в:
Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2007
Автори: Vertsimakha, Ya.I., Lutsyk, P.M.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117920
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Organic iso-type pentacene – lead phthalocyanine heterostructures / Ya.I. Vertsimakha, P.M. Lutsyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 81-85. — Бібліогр.: 9 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:The photovoltaic properties of organic iso-type heterostructures based on
 pentacene (Pn) and lead phthalocyanine (PbPc) prepared by thermal deposition at
 different substrate temperatures (Ts) are investigated. It is shown that, at modulated
 illumination for Pn/PbPc heterostructures prepared at Тs = 300 K, the reversal of a sign is
 observed in photovoltage spectra. The properties of the structures are well described by
 the Van Opdorp model that indicates the presence of the high surface recombination rate
 of charge carriers at the interface of heterostructure components. At this, the contribution
 of heterostructure components to the photovoltage formation can be changed with
 unmodulated monochromatic additional illumination. In Pn/PbPc heterostructures
 prepared at Ts = 370 K, there is no reversal of the photovoltage sign, and the photovoltage
 is significantly (up to twice) higher in comparison with both heterostructures
 obtained at Ts = 300 K and separate layers of components (Pn and PbPc). This is the
 evidence for the low recombination rate of charge carriers at the interface of Pn/PbPc
 heterostructures prepared at Ts = 370 K
ISSN:1560-8034