Organic iso-type pentacene – lead phthalocyanine heterostructures
The photovoltaic properties of organic iso-type heterostructures based on pentacene (Pn) and lead phthalocyanine (PbPc) prepared by thermal deposition at different substrate temperatures (Ts) are investigated. It is shown that, at modulated illumination for Pn/PbPc heterostructures prepared at Тs...
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| Date: | 2007 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117920 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Organic iso-type pentacene – lead phthalocyanine heterostructures / Ya.I. Vertsimakha, P.M. Lutsyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 81-85. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The photovoltaic properties of organic iso-type heterostructures based on
pentacene (Pn) and lead phthalocyanine (PbPc) prepared by thermal deposition at
different substrate temperatures (Ts) are investigated. It is shown that, at modulated
illumination for Pn/PbPc heterostructures prepared at Тs = 300 K, the reversal of a sign is
observed in photovoltage spectra. The properties of the structures are well described by
the Van Opdorp model that indicates the presence of the high surface recombination rate
of charge carriers at the interface of heterostructure components. At this, the contribution
of heterostructure components to the photovoltage formation can be changed with
unmodulated monochromatic additional illumination. In Pn/PbPc heterostructures
prepared at Ts = 370 K, there is no reversal of the photovoltage sign, and the photovoltage
is significantly (up to twice) higher in comparison with both heterostructures
obtained at Ts = 300 K and separate layers of components (Pn and PbPc). This is the
evidence for the low recombination rate of charge carriers at the interface of Pn/PbPc
heterostructures prepared at Ts = 370 K |
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