Dissolution of indium arsenide in nitric solutions of the hydrobromic acid
Dissolution of InAs in HNO₃-HBr-H₂O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO₃]/[HBr] ratio, InAs dissolution may be limited by kinetic, or diffusion, or combined mechanisms. The d...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 1999 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117925 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Dissolution of indium arsenide in nitric solutions of the hydrobromic acid / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 80-83. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862606298983432192 |
|---|---|
| author | Tomashik, Z.F. Danylenko, S.G. Tomashik, V.N. |
| author_facet | Tomashik, Z.F. Danylenko, S.G. Tomashik, V.N. |
| citation_txt | Dissolution of indium arsenide in nitric solutions of the hydrobromic acid / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 80-83. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Dissolution of InAs in HNO₃-HBr-H₂O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO₃]/[HBr] ratio, InAs dissolution may be limited by kinetic, or diffusion, or combined mechanisms. The dissolution rate of InSb in these solutions is rather low, and the etched surface is covered with a friable sediment. HNO₃ -HBr-H₂O solutions can be employed for a dynamic chemical polishing of InAs with a variable etching rate.
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| first_indexed | 2025-11-28T13:35:59Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117925 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-28T13:35:59Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Tomashik, Z.F. Danylenko, S.G. Tomashik, V.N. 2017-05-27T15:54:25Z 2017-05-27T15:54:25Z 1999 Dissolution of indium arsenide in nitric solutions of the hydrobromic acid / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 80-83. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 81.65 C https://nasplib.isofts.kiev.ua/handle/123456789/117925 620.193 : 546.681 19 Dissolution of InAs in HNO₃-HBr-H₂O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO₃]/[HBr] ratio, InAs dissolution may be limited by kinetic, or diffusion, or combined mechanisms. The dissolution rate of InSb in these solutions is rather low, and the etched surface is covered with a friable sediment. HNO₃ -HBr-H₂O solutions can be employed for a dynamic chemical polishing of InAs with a variable etching rate. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Dissolution of indium arsenide in nitric solutions of the hydrobromic acid Article published earlier |
| spellingShingle | Dissolution of indium arsenide in nitric solutions of the hydrobromic acid Tomashik, Z.F. Danylenko, S.G. Tomashik, V.N. |
| title | Dissolution of indium arsenide in nitric solutions of the hydrobromic acid |
| title_full | Dissolution of indium arsenide in nitric solutions of the hydrobromic acid |
| title_fullStr | Dissolution of indium arsenide in nitric solutions of the hydrobromic acid |
| title_full_unstemmed | Dissolution of indium arsenide in nitric solutions of the hydrobromic acid |
| title_short | Dissolution of indium arsenide in nitric solutions of the hydrobromic acid |
| title_sort | dissolution of indium arsenide in nitric solutions of the hydrobromic acid |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117925 |
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