Dissolution of indium arsenide in nitric solutions of the hydrobromic acid

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1999
• Main Authors: Tomashik, Z.F., Danylenko, S.G., Tomashik, V.N.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117925
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Dissolution of indium arsenide in nitric solutions of the hydrobromic acid / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 80-83. — Бібліогр.: 9 назв. — англ.

Dissolution of InAs in HNO₃-HBr-H₂O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO₃]/[HBr] ratio, InAs dissolution may be limited by kinetic, or diffusion, or combined mechanisms. The d...