Silicon-on-insulator technology for microelectromechanical applications

A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of CMOS-MEMS integration for smart sensors are listed. Examples of successful use of...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:1999
Автори: Usenko, A.Y., Carr, W.N.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117927
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Silicon-on-insulator technology for microelectromechanical applications / A.Y. Usenko, W.N. Carr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 93-97. — Бібліогр.: 19 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117927
record_format dspace
spelling Usenko, A.Y.
Carr, W.N.
2017-05-27T16:04:41Z
2017-05-27T16:04:41Z
1999
Silicon-on-insulator technology for microelectromechanical applications / A.Y. Usenko, W.N. Carr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 93-97. — Бібліогр.: 19 назв. — англ.
1560-8034
PACS: 07.79.-v, 07.10.Pz,) 7.10 Cm, 07.07.Df, 85.40.Qx, 84.37.+q
https://nasplib.isofts.kiev.ua/handle/123456789/117927
A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of CMOS-MEMS integration for smart sensors are listed. Examples of successful use of SOI to fabricate advanced MEMS are given and future prospects MEMS on SOI are evaluated.
This work is partially funded by US Ballistic Missile Defense Organization Contract № DASG60-98-M-0127.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Silicon-on-insulator technology for microelectromechanical applications
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Silicon-on-insulator technology for microelectromechanical applications
spellingShingle Silicon-on-insulator technology for microelectromechanical applications
Usenko, A.Y.
Carr, W.N.
title_short Silicon-on-insulator technology for microelectromechanical applications
title_full Silicon-on-insulator technology for microelectromechanical applications
title_fullStr Silicon-on-insulator technology for microelectromechanical applications
title_full_unstemmed Silicon-on-insulator technology for microelectromechanical applications
title_sort silicon-on-insulator technology for microelectromechanical applications
author Usenko, A.Y.
Carr, W.N.
author_facet Usenko, A.Y.
Carr, W.N.
publishDate 1999
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of CMOS-MEMS integration for smart sensors are listed. Examples of successful use of SOI to fabricate advanced MEMS are given and future prospects MEMS on SOI are evaluated.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117927
citation_txt Silicon-on-insulator technology for microelectromechanical applications / A.Y. Usenko, W.N. Carr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 93-97. — Бібліогр.: 19 назв. — англ.
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