Silicon-on-insulator technology for microelectromechanical applications

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1999
• Main Authors: Usenko, A.Y., Carr, W.N.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117927
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Silicon-on-insulator technology for microelectromechanical applications / A.Y. Usenko, W.N. Carr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 93-97. — Бібліогр.: 19 назв. — англ.

A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of CMOS-MEMS integration for smart sensors are listed. Examples of successful use of...