Radiation hardness of AlAs/GaAs-based resonant tunneling diodes
The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters up to doses of 2×10⁹ rad. It is shown that all changes in the current-volta...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 1999 |
| Main Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117928 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Radiation hardness of AlAs/GaAs-based resonant tunneling diodes/ A.A. Belyaev, A.E. Belyaev, R.V. Konakova, S.A. Vitusevich, V.V. Milenin, E.A. Soloviev, L.N. Kravchenko, T. Figielski, T. Wosinski, A. Makosa// Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 98-101. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862695462694289408 |
|---|---|
| author | Belyaev, A.A. Belyaev, A.E. Konakova, R.V. Vitusevich, S.A. Milenin, V.V. Soloviev, E.A. Kravchenko, L.N. Figielski, T. Wosinski, T. Makosa, A. |
| author_facet | Belyaev, A.A. Belyaev, A.E. Konakova, R.V. Vitusevich, S.A. Milenin, V.V. Soloviev, E.A. Kravchenko, L.N. Figielski, T. Wosinski, T. Makosa, A. |
| citation_txt | Radiation hardness of AlAs/GaAs-based resonant tunneling diodes/ A.A. Belyaev, A.E. Belyaev, R.V. Konakova, S.A. Vitusevich, V.V. Milenin, E.A. Soloviev, L.N. Kravchenko, T. Figielski, T. Wosinski, A. Makosa// Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 98-101. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters up to doses of 2×10⁹ rad. It is shown that all changes in the current-voltage characteristics stem from the effect of ionizing radiation on the undoped layers. The radiation-stimulated diffusion of the heteropair components in the contact region is shown to be important for the voltage drop distribution.
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| first_indexed | 2025-12-07T16:24:32Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117928 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:24:32Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Belyaev, A.A. Belyaev, A.E. Konakova, R.V. Vitusevich, S.A. Milenin, V.V. Soloviev, E.A. Kravchenko, L.N. Figielski, T. Wosinski, T. Makosa, A. 2017-05-27T16:05:47Z 2017-05-27T16:05:47Z 1999 Radiation hardness of AlAs/GaAs-based resonant tunneling diodes/ A.A. Belyaev, A.E. Belyaev, R.V. Konakova, S.A. Vitusevich, V.V. Milenin, E.A. Soloviev, L.N. Kravchenko, T. Figielski, T. Wosinski, A. Makosa// Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 98-101. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 73.61, 85.30.M https://nasplib.isofts.kiev.ua/handle/123456789/117928 The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters up to doses of 2×10⁹ rad. It is shown that all changes in the current-voltage characteristics stem from the effect of ionizing radiation on the undoped layers. The radiation-stimulated diffusion of the heteropair components in the contact region is shown to be important for the voltage drop distribution. This work was supported by STCU under Grant No.464. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Radiation hardness of AlAs/GaAs-based resonant tunneling diodes Article published earlier |
| spellingShingle | Radiation hardness of AlAs/GaAs-based resonant tunneling diodes Belyaev, A.A. Belyaev, A.E. Konakova, R.V. Vitusevich, S.A. Milenin, V.V. Soloviev, E.A. Kravchenko, L.N. Figielski, T. Wosinski, T. Makosa, A. |
| title | Radiation hardness of AlAs/GaAs-based resonant tunneling diodes |
| title_full | Radiation hardness of AlAs/GaAs-based resonant tunneling diodes |
| title_fullStr | Radiation hardness of AlAs/GaAs-based resonant tunneling diodes |
| title_full_unstemmed | Radiation hardness of AlAs/GaAs-based resonant tunneling diodes |
| title_short | Radiation hardness of AlAs/GaAs-based resonant tunneling diodes |
| title_sort | radiation hardness of alas/gaas-based resonant tunneling diodes |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117928 |
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