IR sensor readout devices with source input circuits
Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, manufactured and tested in T = 77…300 K temperature region. The on-chip testing...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 1999 |
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117929 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | IR sensor readout devices with source input circuits / F.F. Sizov, V.P. Reva, Yu.P. Derkach, Yu.G. Kononenko, A.G. Golenkov, S.V. Korinets, S.D. Darchuk, D.A. Filenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 102-110. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862649790225973248 |
|---|---|
| author | Sizov, F.F. Reva, V.P. Derkach, Yu.P. Kononenko, Yu.G. Golenkov, A.G. Korinets, S.V. Darchuk, S.D. Filenko, D.A. |
| author_facet | Sizov, F.F. Reva, V.P. Derkach, Yu.P. Kononenko, Yu.G. Golenkov, A.G. Korinets, S.V. Darchuk, S.D. Filenko, D.A. |
| citation_txt | IR sensor readout devices with source input circuits / F.F. Sizov, V.P. Reva, Yu.P. Derkach, Yu.G. Kononenko, A.G. Golenkov, S.V. Korinets, S.D. Darchuk, D.A. Filenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 102-110. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, manufactured and tested in T = 77…300 K temperature region. The on-chip testing switches attach the sources of direct injection transistors to the common load resistors to imitate the output signal of mercury cadmium telluride (MCT) photodiodes. The silicon readout devices for 2x64 n⁺-p- or p⁺-n - linear arrays and n⁺-p- 2x4x128(144) time-delay and integration (TDI) arrays with skimming and partitioning functions were manufactured by n- or p-channel MOS technology with buried channel CCD registers. The designed CCD readout devices are driven with four- or two-phase clocking pulses.
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| first_indexed | 2025-12-01T15:49:14Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117929 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T15:49:14Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sizov, F.F. Reva, V.P. Derkach, Yu.P. Kononenko, Yu.G. Golenkov, A.G. Korinets, S.V. Darchuk, S.D. Filenko, D.A. 2017-05-27T16:08:34Z 2017-05-27T16:08:34Z 1999 IR sensor readout devices with source input circuits / F.F. Sizov, V.P. Reva, Yu.P. Derkach, Yu.G. Kononenko, A.G. Golenkov, S.V. Korinets, S.D. Darchuk, D.A. Filenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 102-110. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 07.07.D, 42.79.P,Q; 85.30 https://nasplib.isofts.kiev.ua/handle/123456789/117929 Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, manufactured and tested in T = 77…300 K temperature region. The on-chip testing switches attach the sources of direct injection transistors to the common load resistors to imitate the output signal of mercury cadmium telluride (MCT) photodiodes. The silicon readout devices for 2x64 n⁺-p- or p⁺-n - linear arrays and n⁺-p- 2x4x128(144) time-delay and integration (TDI) arrays with skimming and partitioning functions were manufactured by n- or p-channel MOS technology with buried channel CCD registers. The designed CCD readout devices are driven with four- or two-phase clocking pulses. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics IR sensor readout devices with source input circuits Article published earlier |
| spellingShingle | IR sensor readout devices with source input circuits Sizov, F.F. Reva, V.P. Derkach, Yu.P. Kononenko, Yu.G. Golenkov, A.G. Korinets, S.V. Darchuk, S.D. Filenko, D.A. |
| title | IR sensor readout devices with source input circuits |
| title_full | IR sensor readout devices with source input circuits |
| title_fullStr | IR sensor readout devices with source input circuits |
| title_full_unstemmed | IR sensor readout devices with source input circuits |
| title_short | IR sensor readout devices with source input circuits |
| title_sort | ir sensor readout devices with source input circuits |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117929 |
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