IR sensor readout devices with source input circuits
Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, manufactured and tested in T = 77…300 K temperature region. The on-chip testing...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 1999 |
| Main Authors: | Sizov, F.F., Reva, V.P., Derkach, Yu.P., Kononenko, Yu.G., Golenkov, A.G., Korinets, S.V., Darchuk, S.D., Filenko, D.A. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117929 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | IR sensor readout devices with source input circuits / F.F. Sizov, V.P. Reva, Yu.P. Derkach, Yu.G. Kononenko, A.G. Golenkov, S.V. Korinets, S.D. Darchuk, D.A. Filenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 102-110. — Бібліогр.: 17 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineSimilar Items
-
Readout electronics for multichannel detectors
by: Kulibaba, V.I., et al.
Published: (2001) -
Brief history of THz and IR technologies
by: F. F. Sizov
Published: (2019) -
Narrow-gap piezoelectric heterostructure as IR detector
by: Sizov, F.F., et al.
Published: (2012) -
Performance limits of terahertz zero biased rectifying detectors for direct detection
by: Golenkov, A.G., et al.
Published: (2016) -
IR region challenges: Photon or thermal detectors? Outlook and means
by: F. F. Sizov
Published: (2012)