Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 1999
• Hauptverfasser: Stronski, A.V., Vlcek, M., Shepeliavyi, P.E., Sklenar, A., Kostyukevich, S.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117930
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication / A.V. Stronski, M. Vlcek, P.E. Shepeliavyi, A. Sklenar, S.A. Kostyukevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 111-114. — Бібліогр.: 7 назв. — англ.

The present paper is concerned with investigations of image formation properties of As₄₀S₂₀Se₄₀ thin layers. Spectral dependence of the refraction index, n, of variously treated (virgin, exposed, annealed) samples was estimated from optical transmission in the spectral region 400 -2500 nm. The n ene...