Resistance thermometers based on the germanium films

The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature range from 0.02 to 500 K, are considered. Characteristics of the thermometer...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:1999
Main Author: Mitin, V.F.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/117931
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Resistance thermometers based on the germanium films / Mitin V.F. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 115-123. — Бібліогр.: 17 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117931
record_format dspace
spelling Mitin, V.F.
2017-05-27T16:10:59Z
2017-05-27T16:10:59Z
1999
Resistance thermometers based on the germanium films / Mitin V.F. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 115-123. — Бібліогр.: 17 назв. — англ.
1560-8034
PACS 73.61.J, 72.20, 85.30, 07.07.D
https://nasplib.isofts.kiev.ua/handle/123456789/117931
The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature range from 0.02 to 500 K, are considered. Characteristics of the thermometers in high magnetic fields and under the action of ionizing irradiation (neutrons and gamma-rays) are presented.
The author would like to express his gratitude to Prof. M.Oszwaldowski (Politechnika Poznanska, Poznan, Poland), Prof. J. Klamut (International Laboratory of High Magnetic Fields and Low Temperatures in Wroclaw, Poland) and to Dr.I.Yu. Nemish (Special Design Office of ISP NASU, Kiev, Ukraine) for collaboration and assistance in thermometer investigations in high magnetic fields and at low temperatures. The author is also grateful to Prof.G.G. Ihas (University of Florida, USA) for examination of thermometers at ultra-low temperatures (25 mK-4.2 K) and in high magnetic fields. The author would like to thank Dr.Yu.P. Filippov (Joint Institute for Nuclear Research, Dubna, Russia) for the interest in germanium film thermometers and investigation of thermometers under the influence of radiation and for helpful discussions. The author is thankful to Dr. N. S. Boltovets (Research Inst. «Orion», Kiev) for collaboration during design of the case, micropackaging and fabrication of thermometers, and to V.V. Kholevchuk (ISP NASU, Kiev) for assistance in conduction of the study. The author thanks Prof. R.V. Konakova and Prof.E.F. Venger (ISP NASU, Kiev) for the support of this research and design work and for helpful discussions.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Resistance thermometers based on the germanium films
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Resistance thermometers based on the germanium films
spellingShingle Resistance thermometers based on the germanium films
Mitin, V.F.
title_short Resistance thermometers based on the germanium films
title_full Resistance thermometers based on the germanium films
title_fullStr Resistance thermometers based on the germanium films
title_full_unstemmed Resistance thermometers based on the germanium films
title_sort resistance thermometers based on the germanium films
author Mitin, V.F.
author_facet Mitin, V.F.
publishDate 1999
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature range from 0.02 to 500 K, are considered. Characteristics of the thermometers in high magnetic fields and under the action of ionizing irradiation (neutrons and gamma-rays) are presented.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117931
citation_txt Resistance thermometers based on the germanium films / Mitin V.F. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 115-123. — Бібліогр.: 17 назв. — англ.
work_keys_str_mv AT mitinvf resistancethermometersbasedonthegermaniumfilms
first_indexed 2025-12-02T13:41:03Z
last_indexed 2025-12-02T13:41:03Z
_version_ 1850862678251143168