Resistance thermometers based on the germanium films
The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature range from 0.02 to 500 K, are considered. Characteristics of the thermometer...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 1999 |
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| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117931 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Resistance thermometers based on the germanium films / Mitin V.F. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 115-123. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862662683383300096 |
|---|---|
| author | Mitin, V.F. |
| author_facet | Mitin, V.F. |
| citation_txt | Resistance thermometers based on the germanium films / Mitin V.F. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 115-123. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature range from 0.02 to 500 K, are considered. Characteristics of the thermometers in high magnetic fields and under the action of ionizing irradiation (neutrons and gamma-rays) are presented.
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| first_indexed | 2025-12-02T13:41:03Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117931 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T13:41:03Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Mitin, V.F. 2017-05-27T16:10:59Z 2017-05-27T16:10:59Z 1999 Resistance thermometers based on the germanium films / Mitin V.F. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 115-123. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 73.61.J, 72.20, 85.30, 07.07.D https://nasplib.isofts.kiev.ua/handle/123456789/117931 The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature range from 0.02 to 500 K, are considered. Characteristics of the thermometers in high magnetic fields and under the action of ionizing irradiation (neutrons and gamma-rays) are presented. The author would like to express his gratitude to Prof. M.Oszwaldowski (Politechnika Poznanska, Poznan, Poland),
 Prof. J. Klamut (International Laboratory of High Magnetic Fields and Low Temperatures in Wroclaw, Poland) and to Dr.I.Yu. Nemish (Special Design Office of ISP NASU, Kiev, Ukraine) for collaboration and assistance in thermometer investigations in high magnetic fields and at low temperatures. The author is also grateful to Prof.G.G. Ihas (University of Florida, USA) for examination of thermometers at ultra-low temperatures (25 mK-4.2 K) and in high magnetic fields. The author would like to thank Dr.Yu.P. Filippov (Joint Institute for Nuclear Research, Dubna, Russia) for the interest in
 germanium film thermometers and investigation of thermometers under the influence of radiation and for helpful discussions. The author is thankful to Dr. N. S. Boltovets (Research Inst. «Orion», Kiev) for collaboration during design of the case, micropackaging and fabrication of thermometers, and to V.V. Kholevchuk (ISP NASU, Kiev) for assistance in conduction of the study. The author thanks Prof. R.V. Konakova and Prof.E.F. Venger (ISP NASU, Kiev) for the support of this research and design work and for helpful discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Resistance thermometers based on the germanium films Article published earlier |
| spellingShingle | Resistance thermometers based on the germanium films Mitin, V.F. |
| title | Resistance thermometers based on the germanium films |
| title_full | Resistance thermometers based on the germanium films |
| title_fullStr | Resistance thermometers based on the germanium films |
| title_full_unstemmed | Resistance thermometers based on the germanium films |
| title_short | Resistance thermometers based on the germanium films |
| title_sort | resistance thermometers based on the germanium films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117931 |
| work_keys_str_mv | AT mitinvf resistancethermometersbasedonthegermaniumfilms |