Resistance thermometers based on the germanium films

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1999
• Main Author: Mitin, V.F.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117931
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Resistance thermometers based on the germanium films / Mitin V.F. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 115-123. — Бібліогр.: 17 назв. — англ.

The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature range from 0.02 to 500 K, are considered. Characteristics of the thermometer...