Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds
Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated in these reactions due to carrier trapping by deep centers that do or even do n...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 1999 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117932 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds / N.E. Korsunskaya, I.V. Markevich, B.R. Dzhumaev, L.V. Borkovskaya, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 4246-ХХ. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117932 |
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dspace |
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Korsunskaya, N. E. Markevich, I. V. Dzhumaev, B. R. Borkovskaya, L. V. Sheinkman, M. K. 2017-05-27T16:13:14Z 2017-05-27T16:13:14Z 1999 Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds / N.E. Korsunskaya, I.V. Markevich, B.R. Dzhumaev, L.V. Borkovskaya, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 4246-ХХ. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 61.72.Ji, 61.72.Yx, 72.40.+w, 72.80.Ey, 78.55.Et https://nasplib.isofts.kiev.ua/handle/123456789/117932 Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated in these reactions due to carrier trapping by deep centers that do or even do not take part in the reaction. To elucidate the real defect reaction mechanism a detailed study is required in every case. For this purpose, a method of mobile defect detection and their diffusion characteristic direct investigation has been elaborated. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds |
| spellingShingle |
Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds Korsunskaya, N. E. Markevich, I. V. Dzhumaev, B. R. Borkovskaya, L. V. Sheinkman, M. K. |
| title_short |
Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds |
| title_full |
Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds |
| title_fullStr |
Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds |
| title_full_unstemmed |
Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds |
| title_sort |
electron-enhanced reactions responsible for photoluminescence spectrum change in ii-vi compounds |
| author |
Korsunskaya, N. E. Markevich, I. V. Dzhumaev, B. R. Borkovskaya, L. V. Sheinkman, M. K. |
| author_facet |
Korsunskaya, N. E. Markevich, I. V. Dzhumaev, B. R. Borkovskaya, L. V. Sheinkman, M. K. |
| publishDate |
1999 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated in these reactions due to carrier trapping by deep centers that do or even do not take part in the reaction. To elucidate the real defect reaction mechanism a detailed study is required in every case. For this purpose, a method of mobile defect detection and their diffusion characteristic direct investigation has been elaborated.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117932 |
| citation_txt |
Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds / N.E. Korsunskaya, I.V. Markevich, B.R. Dzhumaev, L.V. Borkovskaya, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 4246-ХХ. — Бібліогр.: 12 назв. — англ. |
| work_keys_str_mv |
AT korsunskayane electronenhancedreactionsresponsibleforphotoluminescencespectrumchangeiniivicompounds AT markevichiv electronenhancedreactionsresponsibleforphotoluminescencespectrumchangeiniivicompounds AT dzhumaevbr electronenhancedreactionsresponsibleforphotoluminescencespectrumchangeiniivicompounds AT borkovskayalv electronenhancedreactionsresponsibleforphotoluminescencespectrumchangeiniivicompounds AT sheinkmanmk electronenhancedreactionsresponsibleforphotoluminescencespectrumchangeiniivicompounds |
| first_indexed |
2025-12-07T13:24:29Z |
| last_indexed |
2025-12-07T13:24:29Z |
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1850856040397012992 |