Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds
Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated in these reactions due to carrier trapping by deep centers that do or even do n...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 1999 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117932 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds / N.E. Korsunskaya, I.V. Markevich, B.R. Dzhumaev, L.V. Borkovskaya, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 4246-ХХ. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862621586576637952 |
|---|---|
| author | Korsunskaya, N. E. Markevich, I. V. Dzhumaev, B. R. Borkovskaya, L. V. Sheinkman, M. K. |
| author_facet | Korsunskaya, N. E. Markevich, I. V. Dzhumaev, B. R. Borkovskaya, L. V. Sheinkman, M. K. |
| citation_txt | Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds / N.E. Korsunskaya, I.V. Markevich, B.R. Dzhumaev, L.V. Borkovskaya, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 4246-ХХ. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated in these reactions due to carrier trapping by deep centers that do or even do not take part in the reaction. To elucidate the real defect reaction mechanism a detailed study is required in every case. For this purpose, a method of mobile defect detection and their diffusion characteristic direct investigation has been elaborated.
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| first_indexed | 2025-12-07T13:24:29Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117932 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:24:29Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Korsunskaya, N. E. Markevich, I. V. Dzhumaev, B. R. Borkovskaya, L. V. Sheinkman, M. K. 2017-05-27T16:13:14Z 2017-05-27T16:13:14Z 1999 Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds / N.E. Korsunskaya, I.V. Markevich, B.R. Dzhumaev, L.V. Borkovskaya, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 4246-ХХ. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 61.72.Ji, 61.72.Yx, 72.40.+w, 72.80.Ey, 78.55.Et https://nasplib.isofts.kiev.ua/handle/123456789/117932 Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated in these reactions due to carrier trapping by deep centers that do or even do not take part in the reaction. To elucidate the real defect reaction mechanism a detailed study is required in every case. For this purpose, a method of mobile defect detection and their diffusion characteristic direct investigation has been elaborated. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds Article published earlier |
| spellingShingle | Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds Korsunskaya, N. E. Markevich, I. V. Dzhumaev, B. R. Borkovskaya, L. V. Sheinkman, M. K. |
| title | Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds |
| title_full | Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds |
| title_fullStr | Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds |
| title_full_unstemmed | Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds |
| title_short | Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds |
| title_sort | electron-enhanced reactions responsible for photoluminescence spectrum change in ii-vi compounds |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117932 |
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