Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds
Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated in these reactions due to carrier trapping by deep centers that do or even do n...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 1999 |
| Main Authors: | Korsunskaya, N. E., Markevich, I. V., Dzhumaev, B. R., Borkovskaya, L. V., Sheinkman, M. K. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117932 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds / N.E. Korsunskaya, I.V. Markevich, B.R. Dzhumaev, L.V. Borkovskaya, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 4246-ХХ. — Бібліогр.: 12 назв. — англ. |
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