Electro-physical properties of γ-exposed crystals of silicon and germanium
The paper represents a review of research data upon changing electrophysical properties of n-Si and n-Ge when radiation defects arise under action of different γ-irradiation doses. Analyzed are consequences of arising deep levels of radiation defects in the forbidden band of silicon and germanium, w...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 1999 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117933 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electro-physical properties of γ-exposed crystals of silicon and germanium / Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 47-55. — Бібліогр.: 63 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117933 |
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Dotsenko, Yu. P. 2017-05-27T16:18:04Z 2017-05-27T16:18:04Z 1999 Electro-physical properties of γ-exposed crystals of silicon and germanium / Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 47-55. — Бібліогр.: 63 назв. — англ. 1560-8034 PACS 72.15.E, 72.20, 61.72.T, 72.80.C., 71.55.A https://nasplib.isofts.kiev.ua/handle/123456789/117933 The paper represents a review of research data upon changing electrophysical properties of n-Si and n-Ge when radiation defects arise under action of different γ-irradiation doses. Analyzed are consequences of arising deep levels of radiation defects in the forbidden band of silicon and germanium, which leads to the considerable increase of resistivity gradients caused by non-uniform compensation of shallow donor centers. In addition, considered are characteristics of radiation defects energy levels which determine both regularities of electrophysical properties changes and peculiarities of tensoeffects in γ-irradiated crystals. It is noticed that neutron-doped n-Si (P) has larger radiation hardness in respect to γ-irradiation as sompared to silicon doped with phosphorus in the course of crystal growth. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electro-physical properties of γ-exposed crystals of silicon and germanium Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Electro-physical properties of γ-exposed crystals of silicon and germanium |
| spellingShingle |
Electro-physical properties of γ-exposed crystals of silicon and germanium Dotsenko, Yu. P. |
| title_short |
Electro-physical properties of γ-exposed crystals of silicon and germanium |
| title_full |
Electro-physical properties of γ-exposed crystals of silicon and germanium |
| title_fullStr |
Electro-physical properties of γ-exposed crystals of silicon and germanium |
| title_full_unstemmed |
Electro-physical properties of γ-exposed crystals of silicon and germanium |
| title_sort |
electro-physical properties of γ-exposed crystals of silicon and germanium |
| author |
Dotsenko, Yu. P. |
| author_facet |
Dotsenko, Yu. P. |
| publishDate |
1999 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The paper represents a review of research data upon changing electrophysical properties of n-Si and n-Ge when radiation defects arise under action of different γ-irradiation doses. Analyzed are consequences of arising deep levels of radiation defects in the forbidden band of silicon and germanium, which leads to the considerable increase of resistivity gradients caused by non-uniform compensation of shallow donor centers. In addition, considered are characteristics of radiation defects energy levels which determine both regularities of electrophysical properties changes and peculiarities of tensoeffects in γ-irradiated crystals. It is noticed that neutron-doped n-Si (P) has larger radiation hardness in respect to γ-irradiation as sompared to silicon doped with phosphorus in the course of crystal growth.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117933 |
| citation_txt |
Electro-physical properties of γ-exposed crystals of silicon and germanium / Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 47-55. — Бібліогр.: 63 назв. — англ. |
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AT dotsenkoyup electrophysicalpropertiesofγexposedcrystalsofsiliconandgermanium |
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2025-12-07T19:38:24Z |
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2025-12-07T19:38:24Z |
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1850879565977616384 |