Datsenko, L., Auleytner, J., Misiuk, A., Klad'ko, V., Machulin, V., Bak-Misiuk, J., . . . Choinski, J. (1999). Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Datsenko, L.I, et al. "Structure Perfection Variations of Si Crystals Grown by Czochralski or Floating Zone Methods After Implantation of Oxygen or Neon Atoms Followed by Annealing." Semiconductor Physics Quantum Electronics & Optoelectronics 1999.
MLA-Zitierstil (8. Ausg.)Datsenko, L.I, et al. "Structure Perfection Variations of Si Crystals Grown by Czochralski or Floating Zone Methods After Implantation of Oxygen or Neon Atoms Followed by Annealing." Semiconductor Physics Quantum Electronics & Optoelectronics, 1999.