Datsenko, L., Auleytner, J., Misiuk, A., Klad'ko, V., Machulin, V., Bak-Misiuk, J., . . . Choinski, J. (1999). Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Datsenko, L.I, et al. "Structure Perfection Variations of Si Crystals Grown by Czochralski or Floating Zone Methods After Implantation of Oxygen or Neon Atoms Followed by Annealing." Semiconductor Physics Quantum Electronics & Optoelectronics 1999.
Стиль цитування MLA (8-ме видання)Datsenko, L.I, et al. "Structure Perfection Variations of Si Crystals Grown by Czochralski or Floating Zone Methods After Implantation of Oxygen or Neon Atoms Followed by Annealing." Semiconductor Physics Quantum Electronics & Optoelectronics, 1999.