Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals
Hall effect, resistivity and p-n-junction characteristics were investigated on high pure and perfect p-type Hg₁₋xCdxTe crystals (x ~ 0.2) versus temperature, doping, and a way of heat treatment. It was shown, that activation energy of extrinsic acceptors does not depend on conditions of the crystal...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 1999 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117935 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals / V.V. Bogoboyashchiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 62-69. — Бібліогр.: 14 назв. — англ. |
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Bogoboyashchiy, V.V. 2017-05-27T16:25:22Z 2017-05-27T16:25:22Z 1999 Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals / V.V. Bogoboyashchiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 62-69. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 72.20.M, 73.40 https://nasplib.isofts.kiev.ua/handle/123456789/117935 Hall effect, resistivity and p-n-junction characteristics were investigated on high pure and perfect p-type Hg₁₋xCdxTe crystals (x ~ 0.2) versus temperature, doping, and a way of heat treatment. It was shown, that activation energy of extrinsic acceptors does not depend on conditions of the crystal heat treatment, while the first native acceptor level increases monotonically from 10 meV in the Hg-saturated crystal up to 15.4 meV in the Te-saturated one. The experimentally observed energy of the first level of the native acceptor in Te-saturated crystals (15.4 meV) is in a good agreement with the value 16 meV, obtained by calculation carried out in the framework of the effective mass approximation. The difference between the crystals, saturated by Hg or Te, has an essential effect for reverse dark current through a p-n-junction at T = 77 K. It should be taken into account when manufacturing the photodiodes. In summary the author would like to thank K.R.Kurbanov for crystal growth and express his sincere gratitude to A. I. Yelizarov, V. V. Kruzhaiev, and G. V. Minkov for submitting data about influence of the light holes on the field dependence of the Hall effect at low temperatures T < 77 K. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals |
| spellingShingle |
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals Bogoboyashchiy, V.V. |
| title_short |
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals |
| title_full |
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals |
| title_fullStr |
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals |
| title_full_unstemmed |
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals |
| title_sort |
effect of annealing on activation of native acceptors in narrow-gap p-hgcdte crystals |
| author |
Bogoboyashchiy, V.V. |
| author_facet |
Bogoboyashchiy, V.V. |
| publishDate |
1999 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Hall effect, resistivity and p-n-junction characteristics were investigated on high pure and perfect p-type Hg₁₋xCdxTe crystals (x ~ 0.2) versus temperature, doping, and a way of heat treatment. It was shown, that activation energy of extrinsic acceptors does not depend on conditions of the crystal heat treatment, while the first native acceptor level increases monotonically from 10 meV in the Hg-saturated crystal up to 15.4 meV in the Te-saturated one. The experimentally observed energy of the first level of the native acceptor in Te-saturated crystals (15.4 meV) is in a good agreement with the value 16 meV, obtained by calculation carried out in the framework of the effective mass approximation. The difference between the crystals, saturated by Hg or Te, has an essential effect for reverse dark current through a p-n-junction at T = 77 K. It should be taken into account when manufacturing the photodiodes.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117935 |
| citation_txt |
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals / V.V. Bogoboyashchiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 62-69. — Бібліогр.: 14 назв. — англ. |
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2025-12-02T07:30:39Z |
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2025-12-02T07:30:39Z |
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