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Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films

The possibility of forming polycrystalline silicon films by pulse thermal annealing has been investigated using measurement of a photo-e.m.f., dark and light voltage-current characteristics. Investigated samples were resistors of rectangular form with the dimensions 400x40 µm² and had contact areas...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:1999
Hauptverfasser: Mamikonova, V.M., Kasimov, F.D., Kemerchev, G.P.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117936
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films / V.M. Mamikonova, F.D. Kasimov, G.P. Kemerchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 70-75. — Бібліогр.: 7 назв. — англ.

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