Investigation of structural perfection of SiC ingots grown by a sublimation method
Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. The rate of growth varied between 0.3 and 1.5 mm/hour in the C-axis direction....
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 1999 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117937 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Investigation of structural perfection of SiC ingots grown by a sublimation method / S.F. Avramenko, V.S. Kiselev, M.Ya. Valakh, V.G. Visotski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 76-79. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862546383043559424 |
|---|---|
| author | Avramenko, S.F. Kiselev, V.S. Valakh, M.Ya. Visotski, V.G. |
| author_facet | Avramenko, S.F. Kiselev, V.S. Valakh, M.Ya. Visotski, V.G. |
| citation_txt | Investigation of structural perfection of SiC ingots grown by a sublimation method / S.F. Avramenko, V.S. Kiselev, M.Ya. Valakh, V.G. Visotski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 76-79. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. The rate of growth varied between 0.3 and 1.5 mm/hour in the C-axis direction. At growth time of about 15 hours we obtained the ingots with 35 mm useful diameter. To determine the polytype composition of SiC ingots the Raman scattering technique was used. The structural defects were investigated by means of reflection and transmission light microscopy and by selective etching. In the best ingots the dislocation density did not exceed 102 cm⁻², the micropipe density - 10-20 cm⁻², and blocks were absent.
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| first_indexed | 2025-11-25T10:04:08Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117937 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T10:04:08Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Avramenko, S.F. Kiselev, V.S. Valakh, M.Ya. Visotski, V.G. 2017-05-27T16:29:13Z 2017-05-27T16:29:13Z 1999 Investigation of structural perfection of SiC ingots grown by a sublimation method / S.F. Avramenko, V.S. Kiselev, M.Ya. Valakh, V.G. Visotski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 76-79. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 81.05. C, D, E, G, H https://nasplib.isofts.kiev.ua/handle/123456789/117937 Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. The rate of growth varied between 0.3 and 1.5 mm/hour in the C-axis direction. At growth time of about 15 hours we obtained the ingots with 35 mm useful diameter. To determine the polytype composition of SiC ingots the Raman scattering technique was used. The structural defects were investigated by means of reflection and transmission light microscopy and by selective etching. In the best ingots the dislocation density did not exceed 102 cm⁻², the micropipe density - 10-20 cm⁻², and blocks were absent. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Investigation of structural perfection of SiC ingots grown by a sublimation method Article published earlier |
| spellingShingle | Investigation of structural perfection of SiC ingots grown by a sublimation method Avramenko, S.F. Kiselev, V.S. Valakh, M.Ya. Visotski, V.G. |
| title | Investigation of structural perfection of SiC ingots grown by a sublimation method |
| title_full | Investigation of structural perfection of SiC ingots grown by a sublimation method |
| title_fullStr | Investigation of structural perfection of SiC ingots grown by a sublimation method |
| title_full_unstemmed | Investigation of structural perfection of SiC ingots grown by a sublimation method |
| title_short | Investigation of structural perfection of SiC ingots grown by a sublimation method |
| title_sort | investigation of structural perfection of sic ingots grown by a sublimation method |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117937 |
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