Investigation of structural perfection of SiC ingots grown by a sublimation method

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1999
• ISSN: 1560-8034
• Main Authors: Avramenko, S.F., Kiselev, V.S., Valakh, M.Ya., Visotski, V.G.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117937
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Investigation of structural perfection of SiC ingots grown by a sublimation method / S.F. Avramenko, V.S. Kiselev, M.Ya. Valakh, V.G. Visotski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 76-79. — Бібліогр.: 11 назв. — англ.

Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. The rate of growth varied between 0.3 and 1.5 mm/hour in the C-axis direction....