Budzulyak, S., Ermakov, V., Kyjak, B., Kolomoets, V., Machulin, V., Novoselets, M., . . . Venger, E. (2003). Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationBudzulyak, S.I, V.M Ermakov, B.R Kyjak, V.V Kolomoets, V.F Machulin, M.K Novoselets, L.I Panasjuk, B.B Sus', and E.F Venger. "Investigations of Physical Mechanisms of Metal-insulator Transition in Highly Strained N-Si and N-Ge Crystals." Semiconductor Physics Quantum Electronics & Optoelectronics 2003.
MLA (8th ed.) CitationBudzulyak, S.I, et al. "Investigations of Physical Mechanisms of Metal-insulator Transition in Highly Strained N-Si and N-Ge Crystals." Semiconductor Physics Quantum Electronics & Optoelectronics, 2003.