Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals
Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum tran...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автори: | , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117939 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals / S.I. Budzulyak, V.M. Ermakov, B.R. Kyjak, V.V. Kolomoets, V.F. Machulin, M.K. Novoselets, L.I. Panasjuk, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 37-40. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862553775766503424 |
|---|---|
| author | Budzulyak, S.I. Ermakov, V.M. Kyjak, B.R. Kolomoets, V.V. Machulin, V.F. Novoselets, M.K. Panasjuk, L.I. Sus', B.B. Venger, E.F. |
| author_facet | Budzulyak, S.I. Ermakov, V.M. Kyjak, B.R. Kolomoets, V.V. Machulin, V.F. Novoselets, M.K. Panasjuk, L.I. Sus', B.B. Venger, E.F. |
| citation_txt | Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals / S.I. Budzulyak, V.M. Ermakov, B.R. Kyjak, V.V. Kolomoets, V.F. Machulin, M.K. Novoselets, L.I. Panasjuk, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 37-40. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum transformation in n-Si and n-Ge are discussed. The main statements of the effective mass-donor concept for hydrogen-like impurities in monocrystalline semiconductors were verified.
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| first_indexed | 2025-11-25T21:20:34Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117939 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T21:20:34Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Budzulyak, S.I. Ermakov, V.M. Kyjak, B.R. Kolomoets, V.V. Machulin, V.F. Novoselets, M.K. Panasjuk, L.I. Sus', B.B. Venger, E.F. 2017-05-27T16:45:47Z 2017-05-27T16:45:47Z 2003 Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals / S.I. Budzulyak, V.M. Ermakov, B.R. Kyjak, V.V. Kolomoets, V.F. Machulin, M.K. Novoselets, L.I. Panasjuk, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 37-40. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 71.30.+h https://nasplib.isofts.kiev.ua/handle/123456789/117939 Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum transformation in n-Si and n-Ge are discussed. The main statements of the effective mass-donor concept for hydrogen-like impurities in monocrystalline semiconductors were verified. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals Article published earlier |
| spellingShingle | Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals Budzulyak, S.I. Ermakov, V.M. Kyjak, B.R. Kolomoets, V.V. Machulin, V.F. Novoselets, M.K. Panasjuk, L.I. Sus', B.B. Venger, E.F. |
| title | Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals |
| title_full | Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals |
| title_fullStr | Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals |
| title_full_unstemmed | Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals |
| title_short | Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals |
| title_sort | investigations of physical mechanisms of metal-insulator transition in highly strained n-si and n-ge crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117939 |
| work_keys_str_mv | AT budzulyaksi investigationsofphysicalmechanismsofmetalinsulatortransitioninhighlystrainednsiandngecrystals AT ermakovvm investigationsofphysicalmechanismsofmetalinsulatortransitioninhighlystrainednsiandngecrystals AT kyjakbr investigationsofphysicalmechanismsofmetalinsulatortransitioninhighlystrainednsiandngecrystals AT kolomoetsvv investigationsofphysicalmechanismsofmetalinsulatortransitioninhighlystrainednsiandngecrystals AT machulinvf investigationsofphysicalmechanismsofmetalinsulatortransitioninhighlystrainednsiandngecrystals AT novoseletsmk investigationsofphysicalmechanismsofmetalinsulatortransitioninhighlystrainednsiandngecrystals AT panasjukli investigationsofphysicalmechanismsofmetalinsulatortransitioninhighlystrainednsiandngecrystals AT susbb investigationsofphysicalmechanismsofmetalinsulatortransitioninhighlystrainednsiandngecrystals AT vengeref investigationsofphysicalmechanismsofmetalinsulatortransitioninhighlystrainednsiandngecrystals |