Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As

We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanome...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2003
Hauptverfasser: Figielski, T., Wosinski, T., Morawski, A., Pelya, O., Makosa, A., Dobrowolski, W., Wrobel, J., Sadowski, J., Jagielski, J., Ratajczak, J.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117941
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Zitieren:Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ.

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author Figielski, T.
Wosinski, T.
Morawski, A.
Pelya, O.
Makosa, A.
Dobrowolski, W.
Wrobel, J.
Sadowski, J.
Jagielski, J.
Ratajczak, J.
author_facet Figielski, T.
Wosinski, T.
Morawski, A.
Pelya, O.
Makosa, A.
Dobrowolski, W.
Wrobel, J.
Sadowski, J.
Jagielski, J.
Ratajczak, J.
citation_txt Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanometer-size circuits in (Ga,Mn)As suitable for future spin electronics.
first_indexed 2025-11-28T19:50:28Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
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language English
last_indexed 2025-11-28T19:50:28Z
publishDate 2003
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Figielski, T.
Wosinski, T.
Morawski, A.
Pelya, O.
Makosa, A.
Dobrowolski, W.
Wrobel, J.
Sadowski, J.
Jagielski, J.
Ratajczak, J.
2017-05-27T16:47:27Z
2017-05-27T16:47:27Z
2003
Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ.
1560-8034
PACS: 75.50.Pp; 75.75.+a; 85.80.Jm
https://nasplib.isofts.kiev.ua/handle/123456789/117941
We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanometer-size circuits in (Ga,Mn)As suitable for future spin electronics.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
Article
published earlier
spellingShingle Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
Figielski, T.
Wosinski, T.
Morawski, A.
Pelya, O.
Makosa, A.
Dobrowolski, W.
Wrobel, J.
Sadowski, J.
Jagielski, J.
Ratajczak, J.
title Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_full Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_fullStr Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_full_unstemmed Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_short Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
title_sort magnetic point contact in ferromagnetic semiconductor (ga,mn)as
url https://nasplib.isofts.kiev.ua/handle/123456789/117941
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AT wosinskit magneticpointcontactinferromagneticsemiconductorgamnas
AT morawskia magneticpointcontactinferromagneticsemiconductorgamnas
AT pelyao magneticpointcontactinferromagneticsemiconductorgamnas
AT makosaa magneticpointcontactinferromagneticsemiconductorgamnas
AT dobrowolskiw magneticpointcontactinferromagneticsemiconductorgamnas
AT wrobelj magneticpointcontactinferromagneticsemiconductorgamnas
AT sadowskij magneticpointcontactinferromagneticsemiconductorgamnas
AT jagielskij magneticpointcontactinferromagneticsemiconductorgamnas
AT ratajczakj magneticpointcontactinferromagneticsemiconductorgamnas