Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanome...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2003 |
| Main Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117941 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117941 |
|---|---|
| record_format |
dspace |
| spelling |
Figielski, T. Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J. 2017-05-27T16:47:27Z 2017-05-27T16:47:27Z 2003 Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS: 75.50.Pp; 75.75.+a; 85.80.Jm https://nasplib.isofts.kiev.ua/handle/123456789/117941 We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanometer-size circuits in (Ga,Mn)As suitable for future spin electronics. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As |
| spellingShingle |
Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As Figielski, T. Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J. |
| title_short |
Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As |
| title_full |
Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As |
| title_fullStr |
Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As |
| title_full_unstemmed |
Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As |
| title_sort |
magnetic point contact in ferromagnetic semiconductor (ga,mn)as |
| author |
Figielski, T. Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J. |
| author_facet |
Figielski, T. Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanometer-size circuits in (Ga,Mn)As suitable for future spin electronics.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117941 |
| citation_txt |
Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ. |
| work_keys_str_mv |
AT figielskit magneticpointcontactinferromagneticsemiconductorgamnas AT wosinskit magneticpointcontactinferromagneticsemiconductorgamnas AT morawskia magneticpointcontactinferromagneticsemiconductorgamnas AT pelyao magneticpointcontactinferromagneticsemiconductorgamnas AT makosaa magneticpointcontactinferromagneticsemiconductorgamnas AT dobrowolskiw magneticpointcontactinferromagneticsemiconductorgamnas AT wrobelj magneticpointcontactinferromagneticsemiconductorgamnas AT sadowskij magneticpointcontactinferromagneticsemiconductorgamnas AT jagielskij magneticpointcontactinferromagneticsemiconductorgamnas AT ratajczakj magneticpointcontactinferromagneticsemiconductorgamnas |
| first_indexed |
2025-11-28T19:50:28Z |
| last_indexed |
2025-11-28T19:50:28Z |
| _version_ |
1850854090252222464 |