Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanome...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автори: | , , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117941 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862609347038674944 |
|---|---|
| author | Figielski, T. Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J. |
| author_facet | Figielski, T. Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J. |
| citation_txt | Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanometer-size circuits in (Ga,Mn)As suitable for future spin electronics.
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| first_indexed | 2025-11-28T19:50:28Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117941 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-28T19:50:28Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Figielski, T. Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J. 2017-05-27T16:47:27Z 2017-05-27T16:47:27Z 2003 Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS: 75.50.Pp; 75.75.+a; 85.80.Jm https://nasplib.isofts.kiev.ua/handle/123456789/117941 We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanometer-size circuits in (Ga,Mn)As suitable for future spin electronics. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As Article published earlier |
| spellingShingle | Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As Figielski, T. Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J. |
| title | Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As |
| title_full | Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As |
| title_fullStr | Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As |
| title_full_unstemmed | Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As |
| title_short | Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As |
| title_sort | magnetic point contact in ferromagnetic semiconductor (ga,mn)as |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117941 |
| work_keys_str_mv | AT figielskit magneticpointcontactinferromagneticsemiconductorgamnas AT wosinskit magneticpointcontactinferromagneticsemiconductorgamnas AT morawskia magneticpointcontactinferromagneticsemiconductorgamnas AT pelyao magneticpointcontactinferromagneticsemiconductorgamnas AT makosaa magneticpointcontactinferromagneticsemiconductorgamnas AT dobrowolskiw magneticpointcontactinferromagneticsemiconductorgamnas AT wrobelj magneticpointcontactinferromagneticsemiconductorgamnas AT sadowskij magneticpointcontactinferromagneticsemiconductorgamnas AT jagielskij magneticpointcontactinferromagneticsemiconductorgamnas AT ratajczakj magneticpointcontactinferromagneticsemiconductorgamnas |